- 专利标题： Nano-sheet transistors with different threshold voltages
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申请号： US15462447申请日： 2017-03-17
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公开(公告)号： US10177235B2公开(公告)日： 2019-01-08
- 发明人: Karthik Balakrishnan , Kangguo Cheng , Pouya Hashemi , Alexander Reznicek
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Erik Johnson
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/423 ; H01L27/088 ; H01L29/06 ; H01L29/66 ; H01L21/02 ; H01L21/84 ; H01L21/8238 ; H01L21/8234 ; H01L29/49 ; H01L29/786 ; H01L29/40 ; H01L29/775
摘要：
A method of forming two or more nano-sheet devices with varying electrical gate lengths, including, forming at least two cut-stacks including a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer on a substrate, removing a portion of the plurality of sacrificial release layers to form indentations having an indentation depth in the plurality of sacrificial release layers, and removing a portion of the at least one alternating nano-sheet channel layer to form a recess having a recess depth in the at least one alternating nano-sheet channel layers, where the recess depth is greater than the indentation depth.
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