- 专利标题： Substrate processing method, substrate processing apparatus, and non-transitory computer-readable medium
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申请号： US15262489申请日： 2016-09-12
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公开(公告)号： US10185220B2公开(公告)日： 2019-01-22
- 发明人: Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Minato-Ku
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Minato-Ku
- 代理机构： Burr & Brown, PLLC
- 优先权： JP2015-201200 20151009
- 主分类号： B05C11/08
- IPC分类号： B05C11/08 ; B05C5/02 ; B05D1/40 ; B05D1/26 ; G03F7/30 ; B05D1/00 ; H01L21/67
摘要：
A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.