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公开(公告)号：US11480881B2
公开(公告)日：2022-10-25
申请号：US17385387
申请日：2021-07-26
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Kouichirou Tanaka , Masahiro Fukuda , Atsushi Ookouchi
IPC: G03F7/16
Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.
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公开(公告)号：US09304398B2
公开(公告)日：2016-04-05
申请号：US14022434
申请日：2013-09-10
Applicant: Tokyo Electron Limited
Inventor： Yasushi Takiguchi , Taro Yamamoto , Yoshinori Ikeda , Koki Yoshimura , Yoshiki Okamoto , Masahiro Fukuda
CPC classification number: G03F7/16 , G03F7/3021 , G03F7/3092 , H01L21/67017
Abstract: The present invention is a developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure wherein a movable cup is raised to introduce one of scattering developing solutions for the positive and negative resists into an inner peripheral flow path of a cup and the movable cup is lowered to introduce the other of scattering developing solutions for the positive and negative resists into an outer peripheral flow path of the cup, and the developing solution introduced into the inner peripheral flow path and the developing solution introduced into the outer peripheral flow path are separately drained.
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公开(公告)号：US09625821B2
公开(公告)日：2017-04-18
申请号：US14801096
申请日：2015-07-16
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro Fukuda , Taro Yamamoto
CPC classification number: G03F7/30 , G03F7/3021
Abstract: A developing apparatus includes a first cup module and a second cup module arranged to be spaced apart from each other in a transverse direction; a first developing solution nozzle configured to wait in a standby position between the first cup module and the second cup module; and a first moving mechanism configured to move the first developing solution nozzle between the standby position and a processing position in which the developing solution is supplied to the substrate, wherein the first developing solution nozzle includes an ejection hole configured to eject the developing solution to form a liquid puddle on a surface of the substrate, the first developing solution nozzle includes a contact portion formed smaller than the surface of the substrate and installed to face the surface of the substrate, and the first developing solution nozzle spreads the liquid puddle on the substrate.
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4.发明授权公开(公告)号：US09570327B2
公开(公告)日：2017-02-14
申请号：US14651816
申请日：2013-12-12
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masahiro Fukuda , Akihiro Kubo , Taro Yamamoto , Kenzi Yada , Atsushi Ookouchi
CPC classification number: H01L21/67051 , B08B5/00 , B08B5/02 , B08B5/023 , H01L21/67028 , H01L21/67034
Abstract: A substrate liquid treatment apparatus comprises a chuck (13) that holds and rotates a wafer, a back surface purging nozzle (15) that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzle 16 that discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. Vertical distance between the slit-like opening part and the substrate held by the substrate holding unit increases as approaching an end of the opening part on the central side of the substrate. The periphery purging nozzle discharges the purge gas, toward a central part of the substrate, toward a region on the back surface of the substrate, which region is located radially outside an end of the slit-like opening part of the back surface purging nozzle and radially inside an peripheral edge of the substrate.
Abstract translation: 基板液体处理装置包括：保持和旋转晶片的卡盘（13），向晶片背面排出吹扫气体的后表面清洗喷嘴（15），以及将净化气体排出的周边清洗喷嘴16 到晶片的背面。 后表面清洗喷嘴在平面图中具有从基板的中心侧向周边侧延伸的狭缝状的开口部。 狭缝状开口部与被基板保持单元保持的基板之间的垂直距离随着接近基板的中心侧的开口部的端部而增大。 周边清洗喷嘴将清洗气体朝向基板的中心部朝向基板的背面的区域排出，该区域位于背面清洗喷嘴的狭缝状开口部的端部的径向外侧， 径向地位于衬底的周边边缘内。
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公开(公告)号：US11923218B2
公开(公告)日：2024-03-05
申请号：US17177270
申请日：2021-02-17
Applicant: Tokyo Electron Limited
Inventor： Kouichirou Tanaka , Masahiro Fukuda
IPC: H01L21/67 , H01L21/027 , H01L21/673 , H01L21/687
CPC classification number: H01L21/67225 , H01L21/0273 , H01L21/67023 , H01L21/6715 , H01L21/67313 , H01L21/68764
Abstract: A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.
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Patent Agency Ranking
公开(公告)号：US11508589B2
公开(公告)日：2022-11-22
申请号：US16139392
申请日：2018-09-24
Applicant: Tokyo Electron Limited
Inventor： Akiko Kai , Kouichirou Tanaka , Hiroshi Ichinomiya , Masahiro Fukuda
IPC: H01L21/67 , H01L21/02 , H01L21/687
Abstract: When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.
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公开(公告)号：US11079679B2
公开(公告)日：2021-08-03
申请号：US16656925
申请日：2019-10-18
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.
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公开(公告)号：US09470979B2
公开(公告)日：2016-10-18
申请号：US15051780
申请日：2016-02-24
Applicant: Tokyo Electron Limited
Inventor： Yasushi Takiguchi , Taro Yamamoto , Yoshinori Ikeda , Koki Yoshimura , Yoshiki Okamoto , Masahiro Fukuda
CPC classification number: G03F7/16 , G03F7/3021 , G03F7/3092 , H01L21/67017
Abstract: The present invention is a developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure wherein a movable cup is raised to introduce one of scattering developing solutions for the positive and negative resists into an inner peripheral flow path of a cup and the movable cup is lowered to introduce the other of scattering developing solutions for the positive and negative resists into an outer peripheral flow path of the cup, and the developing solution introduced into the inner peripheral flow path and the developing solution introduced into the outer peripheral flow path are separately drained.
Abstract translation: 本发明是一种显影处理装置，用于通过向具有正性抗蚀剂或负性抗蚀剂的前表面的基材供给显影液进行显影，然后进行曝光，其中可移动杯被升高以引入散射显影溶液之一 用于正面和负面的抗蚀剂进入杯子的内周流动路径，并且可移动杯子被降低以将用于正面和负面抗蚀剂的另一个散射显影溶液引入到杯子的外周流动路径中，并且显影溶液引入 进入内周流路，引入外周流路的显影液分别排出。
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公开(公告)号：US11774854B2
公开(公告)日：2023-10-03
申请号：US17959517
申请日：2022-10-04
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Kouichirou Tanaka , Masahiro Fukuda , Atsushi Ookouchi
IPC: G03F7/16
CPC classification number: G03F7/16
Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.
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公开(公告)号：US20200050111A1
公开(公告)日：2020-02-13
申请号：US16656925
申请日：2019-10-18
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.
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