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公开(公告)号：US11079679B2
公开(公告)日：2021-08-03
申请号：US16656925
申请日：2019-10-18
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.
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公开(公告)号：US10108111B1
公开(公告)日：2018-10-23
申请号：US15936818
申请日：2018-03-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takeshi Shimoaoki , Yusaku Hashimoto , Masahiro Fukuda
Abstract: A developing method includes: horizontally holding a substrate; disposing an opposing surface of a developer nozzle that faces a portion of a surface of the substrate, above one of central and peripheral portions of the surface; discharging a developer to form a liquid collection portion of the developer; spreading the liquid collection portion by moving the developer nozzle toward the other of the central and peripheral portions with the opposing surface brought into contact with the liquid collection portion; lifting the developer nozzle relative to the surface while stopping the discharge of the developer, and pulling up a portion of the liquid collection portion; stopping the lifting, and forming a pillar of the developer having a tapered upper end which is brought into contact with the opposing surface; and applying a shearing force to the pillar to shear the tapered upper end and separating the pillar from the opposing surface.
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公开(公告)号：US20190146344A1
公开(公告)日：2019-05-16
申请号：US16152603
申请日：2018-10-05
Applicant: Tokyo Electron Limited
Inventor： Takeshi Shimoaoki , Yusaku Hashimoto , Shogo Inaba
IPC: G03F7/16
CPC classification number: G03F7/162
Abstract: Provided is a development processing apparatus including a rotary holding unit configured to hold and rotate a wafer, a developer supply unit including a nozzle having a liquid contact surface facing a surface of the wafer and an ejection port opening to the liquid contact surface, and a controller. The controller is configured to: while the wafer rotates, execute a control of causing a developer to be ejected from the ejection port and moving the nozzle from an circumference side to a rotation center side of the wafer; after execution of the control, execute a control of moving the nozzle from the rotation center side to the outer circumference side of the wafer; and during execution of the control, execute a control of gradually reducing the rotation speed of the wafer as the center of the liquid contact surface approaches the outer circumference.
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公开(公告)号：US09690202B2
公开(公告)日：2017-06-27
申请号：US14845827
申请日：2015-09-04
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuichi Terashita , Hirofumi Takeguchi , Takeshi Shimoaoki , Kousuke Yoshihara , Tomohiro Iseki
CPC classification number: G03F7/3021 , H01L21/6715
Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.
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Patent Agency Ranking
公开(公告)号：US20200050111A1
公开(公告)日：2020-02-13
申请号：US16656925
申请日：2019-10-18
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.
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公开(公告)号：US10359702B2
公开(公告)日：2019-07-23
申请号：US16152603
申请日：2018-10-05
Applicant: Tokyo Electron Limited
Inventor： Takeshi Shimoaoki , Yusaku Hashimoto , Shogo Inaba
IPC: G03F7/16
Abstract: Provided is a development processing apparatus including a rotary holding unit configured to hold and rotate a wafer, a developer supply unit including a nozzle having a liquid contact surface facing a surface of the wafer and an ejection port opening to the liquid contact surface, and a controller. The controller is configured to: while the wafer rotates, execute a control of causing a developer to be ejected from the ejection port and moving the nozzle from an circumference side to a rotation center side of the wafer; after execution of the control, execute a control of moving the nozzle from the rotation center side to the outer circumference side of the wafer; and during execution of the control, execute a control of gradually reducing the rotation speed of the wafer as the center of the liquid contact surface approaches the outer circumference.
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7.发明授权公开(公告)号：US10203605B2
公开(公告)日：2019-02-12
申请号：US15444671
申请日：2017-02-28
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.
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公开(公告)号：US10185220B2
公开(公告)日：2019-01-22
申请号：US15262489
申请日：2016-09-12
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.
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公开(公告)号：US20180157178A1
公开(公告)日：2018-06-07
申请号：US15823847
申请日：2017-11-28
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
CPC classification number: G03F7/3021 , G03F7/162
Abstract: A controller performs a control to contact, after forming a liquid puddle of a rinse liquid on a surface of a wafer, a liquid contact surface of a nozzle of a developing liquid supply unit with the liquid puddle and to form a liquid puddle of a diluted developing liquid by discharging a developing liquid from the nozzle; a control to rotate the wafer at a first rotation speed which allows the diluted developing liquid inside an edge of the liquid contact surface to stay between the liquid contact surface and the surface and allows the diluted developing liquid outside the edge of the liquid contact surface to be diffused toward an edge of the wafer; and a control to move the nozzle toward the edge of the wafer while rotating the wafer at a second rotation speed smaller than the first rotation speed and discharging the developing liquid.
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