发明授权
- 专利标题: Thin film transistor and manufacturing method thereof, array substrate, display device
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申请号: US14905251申请日: 2015-08-05
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公开(公告)号: US10199504B2公开(公告)日: 2019-02-05
- 发明人: Zhengliang Li , Qi Yao , Zhanfeng Cao , Bin Zhang , Xiaolong He , Jincheng Gao , Xiangchun Kong , Wei Zhang
- 申请人: BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址: CN Beijing
- 专利权人: BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人: BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址: CN Beijing
- 代理机构: Womble Bond Dickinson (US) LLP
- 优先权: CN201510159385 20150403
- 国际申请: PCT/CN2015/086114 WO 20150805
- 国际公布: WO2016/155178 WO 20161006
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H01L29/786 ; H01L21/28 ; H01L27/12 ; H01L29/45 ; H01L29/49
摘要:
Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.
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