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公开(公告)号：US10186617B2
公开(公告)日：2019-01-22
申请号：US15718778
申请日：2017-09-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jincheng Gao , Bin Zhang , Xiaolong He , Xiangchun Kong , Qi Yao , Zhanfeng Cao , Zhengliang Li
IPC: H01L29/786 , H01L29/66 , H01L29/45 , H01L27/12
Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.
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公开(公告)号：US09704833B2
公开(公告)日：2017-07-11
申请号：US14403467
申请日：2014-03-20
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiangchun Kong , Zhanfeng Cao , Qi Yao , Luke Ding
IPC: H01L33/50 , H01L27/32 , H01L27/146 , H01L25/075 , H01L27/15 , H01L33/56
CPC classification number: H01L25/0753 , H01L27/14621 , H01L27/153 , H01L27/156 , H01L27/3241 , H01L33/50 , H01L33/502 , H01L33/56
Abstract: A full-color display panel includes a plurality of sub-pixel units. The sub-pixel unit includes an LED unit and a filter layer transmitting light of a specific color. The LED unit includes an LED semiconductor chip emitting light of a specific color. The LED semiconductor chips of the plurality of sub-pixel units are homochromatic LED semiconductor chips emitting light of a same color. In each sub-pixel unit, a position of the filter layer corresponds to a position of the LED semiconductor chip, and the filter layer is located on a side of the LED semiconductor chip that emits light.
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3.发明申请THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE 有权薄膜晶体管，其制造方法，阵列基板和显示装置公开(公告)号：US20160336458A1
公开(公告)日：2016-11-17
申请号：US15149587
申请日：2016-05-09
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jincheng Gao , Bin Zhang , Xiaolong He , Xiangchun Kong , Qi Yao , Zhanfeng Cao , Zhengliang Li
IPC: H01L29/786 , H01L29/66 , H01L27/12
CPC classification number: H01L29/78606 , H01L27/1225 , H01L27/127 , H01L29/45 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.
Abstract translation: 公开了薄膜晶体管，其制造方法，阵列基板和显示装置。 制造薄膜晶体管的方法包括：形成半导体层; 在作为保护层的半导体层上形成不与酸溶液反应的导电膜; 在保护层上形成源电极和漏电极; 以及去除所述源电极和所述漏极之间的所述保护层的一部分，以暴露所述源电极和所述漏电极之间的所述半导体层的一部分。
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4.发明授权公开(公告)号：US10175548B2
公开(公告)日：2019-01-08
申请号：US15086933
申请日：2016-03-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xuefei Sun , Zhengliang Li , Zhanfeng Cao , Xiangchun Kong , Qi Yao , Jincheng Gao , Feng Guan , Xiaolong He , Bin Zhang , Wei Zhang
Abstract: A display device, a manufacturing method thereof, a driving method thereof and a display apparatus. The display device includes: a display panel; and an electrochromic device located on a light exiting side of the display panel. The electrochromic device and the display panel share a first base substrate and a first transparent electrode in the display panel that are close to the light exiting side of the display panel.
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5.发明授权公开(公告)号：US10019934B2
公开(公告)日：2018-07-10
申请号：US14892521
申请日：2015-04-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Bin Zhang , Zhanfeng Cao , Xiangchun Kong , Qi Yao , Jincheng Gao , Zhengliang Li , Xiaolong He
Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.
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Patent Agency Ranking
6.发明授权Display device, transflective thin film transistor array substrate and manufacturing method thereof 有权显示装置，透反射薄膜晶体管阵列基板及其制造方法公开(公告)号：US09285631B2
公开(公告)日：2016-03-15
申请号：US14080876
申请日：2013-11-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiangchun Kong , Seong-Yeol Yoo
IPC: H01L33/08 , G02F1/1335 , G02F1/1343 , G02F1/1362
CPC classification number: G02F1/133555 , G02F1/134363 , G02F1/1362 , G02F1/136286
Abstract: The present invention provides a display device, a transflective thin film transistor array substrate and a manufacturing method thereof, the manufacturing method comprises: providing a substrate; forming a gate line, a data line which is broken when passing through a gate line area, a gate electrode, a reflective electrode and a common electrode line; forming a patterned gate insulating layer and an active layer located above the gate insulating layer; forming a pixel electrode, a source electrode, a drain electrode, a connection line of the data line and a channel; forming a passivation layer and a common electrode via hole; forming a common electrode. The present invention can avoid the problem of poor display effect under strong light.
Abstract translation: 本发明提供一种显示装置，透反射薄膜晶体管阵列基板及其制造方法，其制造方法包括：提供基板; 形成栅极线，通过栅极线区域时断开的数据线，栅电极，反射电极和公共电极线; 形成图案化栅极绝缘层和位于栅极绝缘层上方的有源层; 形成像素电极，源电极，漏电极，数据线的连接线和沟道; 形成钝化层和公共电极通孔; 形成公共电极。 本发明可以避免在强光下显示效果差的问题。
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公开(公告)号：US09905705B2
公开(公告)日：2018-02-27
申请号：US15096807
申请日：2016-04-12
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiangchun Kong , Zhanfeng Cao , Wei Zhang , Bin Zhang , Xiaolong He , Jincheng Gao , Qi Yao , Zhengliang Li , Chuanxiang Xu
IPC: H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L29/786 , H01L27/12 , G02F1/1368 , G02F1/1343 , G02F1/1362
CPC classification number: H01L29/78696 , G02F1/134309 , G02F1/136286 , G02F1/1368 , G02F2001/134345 , G02F2001/136222 , G02F2201/40 , H01L27/124 , H01L29/41733 , H01L29/42384 , H01L29/78603
Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.
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公开(公告)号：US09812579B2
公开(公告)日：2017-11-07
申请号：US15149587
申请日：2016-05-09
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jincheng Gao , Bin Zhang , Xiaolong He , Xiangchun Kong , Qi Yao , Zhanfeng Cao , Zhengliang Li
IPC: H01L29/786 , H01L29/45 , H01L27/12 , H01L29/66
CPC classification number: H01L29/78606 , H01L27/1225 , H01L27/127 , H01L29/45 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.
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9.发明申请DISPLAY DEVICE, TRANSFLECTIVE THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权显示装置，透射薄膜晶体管阵列基板及其制造方法公开(公告)号：US20140138717A1
公开(公告)日：2014-05-22
申请号：US14080876
申请日：2013-11-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiangchun Kong , Seong-Yeol Yoo
IPC: G02F1/1368
CPC classification number: G02F1/133555 , G02F1/134363 , G02F1/1362 , G02F1/136286
Abstract: The present invention provides a display device, a transflective thin film transistor array substrate and a manufacturing method thereof, the manufacturing method comprises: providing a substrate; forming a gate line, a data line which is broken when passing through a gate line area, a gate electrode, a reflective electrode and a common electrode line; forming a patterned gate insulating layer and an active layer located above the gate insulating layer; forming a pixel electrode, a source electrode, a drain electrode, a connection line of the data line and a channel; forming a passivation layer and a common electrode via hole; forming a common electrode. The present invention can avoid the problem of poor display effect under strong light.
Abstract translation: 本发明提供一种显示装置，透反射薄膜晶体管阵列基板及其制造方法，其制造方法包括：提供基板; 形成栅极线，通过栅极线区域时断开的数据线，栅电极，反射电极和公共电极线; 形成图案化栅极绝缘层和位于栅极绝缘层上方的有源层; 形成像素电极，源电极，漏电极，数据线的连接线和沟道; 形成钝化层和公共电极通孔; 形成公共电极。 本发明可以避免在强光下显示效果差的问题。
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公开(公告)号：US10199504B2
公开(公告)日：2019-02-05
申请号：US14905251
申请日：2015-08-05
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhengliang Li , Qi Yao , Zhanfeng Cao , Bin Zhang , Xiaolong He , Jincheng Gao , Xiangchun Kong , Wei Zhang
Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.
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