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公开(公告)号：US10985320B2
公开(公告)日：2021-04-20
申请号：US16484150
申请日：2018-12-26
发明人： Ji Zhang , Weiwei Hu , Liang Chen , Jincheng Gao , Guanbao Hui
摘要： The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.
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公开(公告)号：US10186617B2
公开(公告)日：2019-01-22
申请号：US15718778
申请日：2017-09-28
发明人： Jincheng Gao , Bin Zhang , Xiaolong He , Xiangchun Kong , Qi Yao , Zhanfeng Cao , Zhengliang Li
IPC分类号： H01L29/786 , H01L29/66 , H01L29/45 , H01L27/12
摘要： A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.
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3.发明申请THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE 有权薄膜晶体管，其制造方法，阵列基板和显示装置公开(公告)号：US20160336458A1
公开(公告)日：2016-11-17
申请号：US15149587
申请日：2016-05-09
发明人： Jincheng Gao , Bin Zhang , Xiaolong He , Xiangchun Kong , Qi Yao , Zhanfeng Cao , Zhengliang Li
IPC分类号： H01L29/786 , H01L29/66 , H01L27/12
CPC分类号： H01L29/78606 , H01L27/1225 , H01L27/127 , H01L29/45 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.
摘要翻译： 公开了薄膜晶体管，其制造方法，阵列基板和显示装置。 制造薄膜晶体管的方法包括：形成半导体层; 在作为保护层的半导体层上形成不与酸溶液反应的导电膜; 在保护层上形成源电极和漏电极; 以及去除所述源电极和所述漏极之间的所述保护层的一部分，以暴露所述源电极和所述漏电极之间的所述半导体层的一部分。
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4.发明授权公开(公告)号：US10175548B2
公开(公告)日：2019-01-08
申请号：US15086933
申请日：2016-03-31
发明人： Xuefei Sun , Zhengliang Li , Zhanfeng Cao , Xiangchun Kong , Qi Yao , Jincheng Gao , Feng Guan , Xiaolong He , Bin Zhang , Wei Zhang
摘要： A display device, a manufacturing method thereof, a driving method thereof and a display apparatus. The display device includes: a display panel; and an electrochromic device located on a light exiting side of the display panel. The electrochromic device and the display panel share a first base substrate and a first transparent electrode in the display panel that are close to the light exiting side of the display panel.
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公开(公告)号：US10141352B2
公开(公告)日：2018-11-27
申请号：US15325402
申请日：2016-03-09
发明人： Zhanfeng Cao , Feng Zhang , Bin Zhang , Xiaolong He , Zhengliang Li , Wei Zhang , Feng Guan , Jincheng Gao
摘要： A manufacturing method of an array substrate is provided. The method includes sequentially depositing a first electrode layer and a gate metal layer on a base substrate, the first electrode layer including at least two conductive layers, formation materials of the at least two conductive layers having different etching rates. The method also includes forming a photoresist layer on the gate metal layer, exposing and developing the photoresist layer using a halftone mask plate, performing a first etching process on the gate metal layer, etching the first electrode layer, and ashing the photoresist layer, performing a second etching process on the gate metal layer by using remaining photoresist layer as a mask, stripping the remaining photoresist layer, and sequentially forming a semiconductor layer, a source and drain electrode layer, a via-hole and a second electrode layer on the gate metal layer on which the second etching process has been performed.
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6.发明授权公开(公告)号：US10019934B2
公开(公告)日：2018-07-10
申请号：US14892521
申请日：2015-04-14
发明人： Bin Zhang , Zhanfeng Cao , Xiangchun Kong , Qi Yao , Jincheng Gao , Zhengliang Li , Xiaolong He
摘要： The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.
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公开(公告)号：US20170192321A1
公开(公告)日：2017-07-06
申请号：US15229601
申请日：2016-08-05
发明人： Zhengliang Li , Shi Shu , Zhanfeng Cao , Bin Zhang , Xiaolong He , Qi Yao , Jincheng Gao , Feng Guan , Xuefei Sun
IPC分类号： G02F1/1362 , H01L21/02 , H01L27/12
CPC分类号： G02F1/136209 , H01L27/1218 , H01L27/1222 , H01L27/1259
摘要： A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.
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公开(公告)号：US12113076B2
公开(公告)日：2024-10-08
申请号：US17514265
申请日：2021-10-29
发明人： Liang Chen , Jincheng Gao , Haijiao Qian , Tao Jiang , Zexu Liu , Tao Wang , Lixing Zhao , Guanyong Zhang , Quanzhou Liu , Jiantao Liu
IPC分类号： H01L27/12 , H01L21/311
CPC分类号： H01L27/1248 , H01L21/31116 , H01L21/31138 , H01L27/1262 , H01L27/124
摘要： Embodiments of the disclosure provide a display substrate and a method for manufacturing the same. The display substrate includes: a base substrate; a thin film transistor including a source-drain metal layer and a first insulating layer; a second insulating layer; a color resist layer; and a third insulating layer. The third insulating layer comprises a first via hole that sequentially penetrates the third insulating layer, the color resist layer and the second insulating layer and thus extends from the third insulating layer to the source-drain metal layer. A sidewall of the first via hole comprises a first portion formed of a material of the second insulating layer, a second portion formed of a material of the color resist layer, and a third portion formed of a material of the third insulating layer, the second portion is between the first portion and the third portion.
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9.发明授权公开(公告)号：US10386724B2
公开(公告)日：2019-08-20
申请号：US15313910
申请日：2015-09-29
发明人： Bin Zhang , Tingting Zhou , Feng Zhang , Wei Zhang , Jincheng Gao
IPC分类号： G03F7/40 , G03F7/038 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/26 , H01L33/00 , H01L33/06 , H01L33/28 , H01L33/30 , H01L51/00 , H01L51/50
摘要： A photoresist, a patterning method of a quantum dot layer, a QLED, a quantum dot color filter and a display device are disclosed, which can solve the problem that current patterning methods destroy quantum dots. The patterning method of a quantum dot layer includes the steps of: forming a hydrophilic photoresist pattern which comprises forming a photoresist material layer on a substrate by using a photoresist, patterning the photoresist material layer to form a photoresist pattern, and subjecting the photoresist to hydrophilic treatment; applying quantum dots; removing the quantum dots retained on the photoresist pattern; and stripping the photoresist pattern. The patterning method of a quantum dot layer in the present disclosure can improve the hydrophilic performance of the photoresist and reduce the adhesion of the lipophilic quantum dots on the photoresist.
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公开(公告)号：US09905705B2
公开(公告)日：2018-02-27
申请号：US15096807
申请日：2016-04-12
发明人： Xiangchun Kong , Zhanfeng Cao , Wei Zhang , Bin Zhang , Xiaolong He , Jincheng Gao , Qi Yao , Zhengliang Li , Chuanxiang Xu
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L29/786 , H01L27/12 , G02F1/1368 , G02F1/1343 , G02F1/1362
CPC分类号： H01L29/78696 , G02F1/134309 , G02F1/136286 , G02F1/1368 , G02F2001/134345 , G02F2001/136222 , G02F2201/40 , H01L27/124 , H01L29/41733 , H01L29/42384 , H01L29/78603
摘要： A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.
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