Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, array substrate, display device
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Application No.: US14905251Application Date: 2015-08-05
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Publication No.: US10199504B2Publication Date: 2019-02-05
- Inventor: Zhengliang Li , Qi Yao , Zhanfeng Cao , Bin Zhang , Xiaolong He , Jincheng Gao , Xiangchun Kong , Wei Zhang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Womble Bond Dickinson (US) LLP
- Priority: CN201510159385 20150403
- International Application: PCT/CN2015/086114 WO 20150805
- International Announcement: WO2016/155178 WO 20161006
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L21/28 ; H01L27/12 ; H01L29/45 ; H01L29/49

Abstract:
Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.
Public/Granted literature
- US20170098714A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, DISPLAY DEVICE Public/Granted day:2017-04-06
Information query
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