- Patent Title: Method, apparatus and system for a high density middle of line flow
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Application No.: US15067540Application Date: 2016-03-11
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Publication No.: US10236350B2Publication Date: 2019-03-19
- Inventor: Guillaume Bouche , Tuhin Guha Neogi , Sudharshanan Raghunathan , Andy Chi-Hung Wei , Jason Eugene Stephens , Vikrant Kumar Chauhan , David Michael Permana
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/49 ; H01L29/66 ; H01L21/311 ; H01L21/02 ; H01L21/3105 ; H01L21/027 ; H01L21/768
Abstract:
At least one method, apparatus and system disclosed herein for forming a finFET device. A gate structure comprising a gate spacer on a semiconductor wafer is formed. A self-aligned contact (SAC) cap is formed over the gate structure. A TS structure is formed. At least one M0 metal structure void is formed. At least one CB structure void adjacent the M0 metal structure void is formed. An etch process is performed the M0 and CB structures voids to the gate structure. At least one CA structure void adjacent the CB structure void is formed. The M0, CB, and CA structure voids are metallized.
Public/Granted literature
- US20170263715A1 METHOD, APPARATUS AND SYSTEM FOR A HIGH DENSITY MIDDLE OF LINE FLOW Public/Granted day:2017-09-14
Information query
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