Invention Grant
- Patent Title: Super-junction semiconductor power devices with fast switching capability
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Application No.: US15077579Application Date: 2016-03-22
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Publication No.: US10243039B2Publication Date: 2019-03-26
- Inventor: Alexander Viktorovich Bolotnikov , Peter Almern Losee , David Alan Lilienfeld , Reza Ghandi
- Applicant: General Electric Company
- Applicant Address: US NY Schenectady
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Schenectady
- Agency: GE Global Patent Operation
- Agent John Darling
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L29/06 ; H01L29/16 ; H01L29/66 ; H01L29/73 ; H01L29/78 ; H01L29/732 ; H01L29/808 ; H01L29/861 ; H01L29/872
Abstract:
A super junction (SJ) device may include one or more charge balance (CB) layers. Each CB layer may include an epitaxial (epi) layer having a first conductivity type and a plurality of charge balance (CB) regions having a second conductivity type. Additionally, the SJ device may include a connection region having the second conductivity type that extends from a region disposed in a top surface of a device layer of the SJ device to one or more of the CB regions. The connection region may enable carriers to flow directly from the region to the one or more CB regions, which may decrease switching losses of the SJ device.
Public/Granted literature
- US20170278924A1 SUPER-JUNCTION SEMICONDUCTOR POWER DEVICES WITH FAST SWITCHING CAPABILITY Public/Granted day:2017-09-28
Information query
IPC分类:
