Invention Grant
- Patent Title: Narrowed feature formation during a double patterning process
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Application No.: US15587597Application Date: 2017-05-05
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Publication No.: US10249496B2Publication Date: 2019-04-02
- Inventor: Jiehui Shu , Xusheng Yu , John H. Zhang , Xiaoqiang Zhang
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L23/525 ; H01L23/532 ; H01L21/311

Abstract:
Interconnect structures and methods of fabricating an interconnect structure. A first mandrel line, a second mandrel line, and a non-mandrel line between the first mandrel line and the second mandrel line are provided. A first sidewall spacer is formed adjacent to a section of the first mandrel line and is arranged between the section of the first mandrel line and the non-mandrel line. A first cut is formed that extends partially across the non-mandrel line adjacent to the first spacer to narrow a section of the non-mandrel line. The section of the first mandrel line is removed selective to the first sidewall spacer to form a second cut. An interconnect is formed using the non-mandrel line. The interconnect includes a narrowed section coinciding with a location of the narrowed section of the non-mandrel line.
Public/Granted literature
- US20180323067A1 NARROWED FEATURE FORMATION DURING A DOUBLE PATTERNING PROCESS Public/Granted day:2018-11-08
Information query
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