Invention Grant
- Patent Title: Semiconductor device for power transistor
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Application No.: US16137279Application Date: 2018-09-20
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Publication No.: US10256339B2Publication Date: 2019-04-09
- Inventor: Yasunori Yamashita , Koichi Arai , Kenichi Hisada
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-124326 20160623
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L29/66 ; H01L21/311 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/16 ; H01L29/423 ; H01L29/45 ; H01L29/51
Abstract:
In a semiconductor device, in a gate insulating film which is formed on/over an inner wall of a trench, the film thickness of a part of a gate insulating film formed so as to cover a corner of the trench is made thicker than the film thickness of apart of the gate insulating film part formed on/over a side face of the trench.
Public/Granted literature
- US20190027597A1 SEMICONDUCTOR DEVICE FOR POWER TRANSISTOR Public/Granted day:2019-01-24
Information query
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