公开(公告)号：US10256339B2

公开(公告)日：2019-04-09

申请号：US16137279

申请日：2018-09-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yasunori Yamashita ,  Koichi Arai ,  Kenichi Hisada

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L21/311 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423 ,  H01L29/45 ,  H01L29/51

Abstract: In a semiconductor device, in a gate insulating film which is formed on/over an inner wall of a trench, the film thickness of a part of a gate insulating film formed so as to cover a corner of the trench is made thicker than the film thickness of apart of the gate insulating film part formed on/over a side face of the trench.

公开(公告)号：US10109733B2

公开(公告)日：2018-10-23

申请号：US15627333

申请日：2017-06-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yasunori Yamashita ,  Koichi Arai ,  Kenichi Hisada

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423 ,  H01L29/45 ,  H01L29/51 ,  H01L29/66

Abstract: In a semiconductor device, in a gate insulating film which is formed on/over an inner wall of a trench, the film thickness of a part of a gate insulating film formed so as to cover a corner of the trench is made thicker than the film thickness of a part of the gate insulating film part formed on/over a side face of the trench.