Invention Grant
- Patent Title: Hybrid bond pad structure
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Application No.: US15626834Application Date: 2017-06-19
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Publication No.: US10269770B2Publication Date: 2019-04-23
- Inventor: Sin-Yao Huang , Chun-Chieh Chuang , Ching-Chun Wang , Sheng-Chau Chen , Dun-Nian Yaung , Feng-Chi Hung , Yung-Lung Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/498 ; H01L25/00 ; H01L27/146 ; H01L23/52

Abstract:
In some embodiments, the present disclosure relates to a multi-dimensional integrated chip having a redistribution structure vertically extending between integrated chip die at a location laterally offset from a bond pad. The integrated chip structure has a first die and a second die. The first die has a first plurality of interconnect layers arranged within a first dielectric structure disposed on a first substrate. The second die has a second plurality of interconnect layers arranged within a second dielectric structure disposed between the first dielectric structure and a second substrate. A bond pad is disposed within a recess extending through the second substrate. A redistribution structure electrically couples the first die to the second die at a position that is laterally offset from the bond pad.
Public/Granted literature
- US20170287878A1 HYBRID BOND PAD STRUCTURE Public/Granted day:2017-10-05
Information query
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