Invention Grant
- Patent Title: Methods and apparatus for three-dimensional nonvolatile memory
-
Application No.: US15441284Application Date: 2017-02-24
-
Publication No.: US10283567B2Publication Date: 2019-05-07
- Inventor: Juan Saenz , Deepak Kamalanathan , Guangle Zhou , Ming-Che Wu , Tanmay Kumar
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00

Abstract:
A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and conductive oxide material layer, forming a first barrier material layer between the word line and the nonvolatile memory material, forming a second barrier material layer between the bit line and the nonvolatile memory material, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line.
Public/Granted literature
- US20180247975A1 METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY Public/Granted day:2018-08-30
Information query
IPC分类: