A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line includes a first portion and a second portion including an electrically conductive carbon-containing material. The nonvolatile memory material includes a semiconductor material layer and a conductive oxide material layer, with the semiconductor material layer disposed adjacent the second portion of the word line.