Invention Grant
- Patent Title: Metal block and bond pad structure
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Application No.: US15213519Application Date: 2016-07-19
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Publication No.: US10297631B2Publication Date: 2019-05-21
- Inventor: Cheng-Ying Ho , Ching-Chun Wang , Dun-Nian Yaung , Feng-Chi Hung , Yan-Chih Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
In some embodiments, the present disclosure relates to an integrated chip (IC) structure having a conductive blocking structure configured prevent radiation produced by a device within a first die from affecting an image sensing element within a second die. The IC structure has a first IC die with one or more semiconductor devices and a second IC die with an array of image sensing elements. A hybrid bonding interface region is arranged between the first and second IC die. A conductive bonding structure is arranged within the hybrid bonding interface region and is configured to electrically couple the first IC die to the second IC die. A conductive blocking structure is arranged within the hybrid bonding interface region and extends laterally between the one or more semiconductor devices and the array of image sensing elements.
Public/Granted literature
- US20170221950A1 Metal Block and Bond Pad Structure Public/Granted day:2017-08-03
Information query
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