Invention Grant
- Patent Title: Refresh architecture and algorithm for non-volatile memories
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Application No.: US16108828Application Date: 2018-08-22
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Publication No.: US10311951B2Publication Date: 2019-06-04
- Inventor: Ferdinando Bedeschi , Roberto Gastaldi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G06F11/10 ; G11C16/34 ; G11C14/00 ; G11C29/52 ; G11C11/56
Abstract:
Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
Public/Granted literature
- US20180366189A1 REFRESH ARCHITECTURE AND ALGORITHM FOR NON-VOLATILE MEMORIES Public/Granted day:2018-12-20
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