- 专利标题： Method of maintaining the state of semiconductor memory having electrically floating body transistor
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申请号： US16200997申请日： 2018-11-27
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公开(公告)号： US10340276B2公开(公告)日： 2019-07-02
- 发明人: Yuniarto Widjaja , Zvi Or-Bach
- 申请人： Zeno Semiconductor, Inc.
- 申请人地址： US CA Sunnyvale
- 专利权人： Zeno Semiconductor, Inc.
- 当前专利权人： Zeno Semiconductor, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Alan W. Cannon
- 主分类号： G11C14/00
- IPC分类号： G11C14/00 ; H01L27/108 ; H01L29/772 ; H01L29/66 ; H01L29/78 ; G11C11/404 ; H01L29/10 ; G11C11/4096 ; G11C11/4094 ; G11C11/4074 ; G11C7/22 ; H01L29/788 ; H01L23/528 ; G11C11/39 ; G11C11/4099 ; H01L27/102 ; H01L29/08 ; G11C11/402 ; G11C11/04
摘要：
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
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