- Patent Title: Self-optimized power management for DDR-compatible memory systems
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Application No.: US15231629Application Date: 2016-08-08
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Publication No.: US10347306B2Publication Date: 2019-07-09
- Inventor: Mu-Tien Chang , Dimin Niu , Hongzhong Zheng , Craig Hanson , Sun Young Lim , Indong Kim , Jangseok Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Main IPC: G06F1/32
- IPC: G06F1/32 ; G06F1/26 ; G11C7/10 ; G06F1/3234 ; G11C5/04 ; G11C7/22 ; G06F1/3287 ; G11C5/14 ; G11C11/4074

Abstract:
A memory module includes a plurality of memory components, an in-memory power manager, and an interface to a host computer over a memory bus. The in-memory power manager is configured to control a transition of a power state of the memory module. The transition of the power state of the memory module includes a direct transition from a low power down state to a maximum power down state.
Public/Granted literature
- US20170365305A1 SELF-OPTIMIZED POWER MANAGEMENT FOR DDR-COMPATIBLE MEMORY SYSTEMS Public/Granted day:2017-12-21
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