Invention Grant
- Patent Title: Field effect transistor contact with reduced contact resistance using implantation process
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Application No.: US15991570Application Date: 2018-05-29
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Publication No.: US10347762B1Publication Date: 2019-07-09
- Inventor: Su-Hao Liu , Kuo-Ju Chen , Chun-Hung Wu , Chia-Cheng Chen , Liang-Yin Chen , Huicheng Chang , Ying-Lang Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L21/02 ; H01L21/3115 ; H01L29/66 ; H01L21/8234 ; H01L29/165 ; H01L21/3215

Abstract:
Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-type source/drain region. In an embodiment, a method includes forming a source/drain region in an active area on a substrate, the source/drain region comprising germanium, performing an ion implantation process using gallium (Ga) to form an amorphous region in the source/drain region, performing an ion implantation process using a dopant into the amorphous region, and subjecting the amorphous region to a thermal process.
Information query
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