Invention Grant
- Patent Title: Group III-V nitride-based light emitting devices having multilayered P-type contacts
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Application No.: US15928774Application Date: 2018-03-22
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Publication No.: US10347790B2Publication Date: 2019-07-09
- Inventor: Zhenqiang Ma , Dong Liu
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manninng, LLC
- Agent Michelle Manning
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0328 ; H01L33/06 ; H01L33/00 ; H01L33/34 ; H01L33/32
Abstract:
Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.
Public/Granted literature
- US20180277715A1 GROUP III-V NITRIDE-BASED LIGHT EMITTING DEVICES HAVING MULTILAYERED P-TYPE CONTACTS Public/Granted day:2018-09-27
Information query
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