-
1.发明授权公开(公告)号：US10793733B2
公开(公告)日：2020-10-06
申请号：US15564522
申请日：2016-04-07
IPC分类号： C09D11/00 , C09D11/36 , B33Y80/00 , B33Y70/00 , B33Y10/00 , C09D11/10 , C22B5/00 , C21B15/02 , C09D11/322 , C04B35/18 , B29C64/165 , C01G49/02 , C04B35/10 , C04B35/14 , C09D1/00 , C09D4/00 , C09D5/00 , C09D13/00 , C09K3/00
摘要： Ink compositions for fabricating objects from planetary regoliths and objects fabricated from the ink compositions are provided. The objects include flexible, elastomeric objects and hard objects. Also provided are methods, including three-dimensional (3D) printing methods, for fabricating objects using the ink compositions. The ink compositions comprise a natural planetary regolith, such as an extraterrestrial regolith, a graded solvent system, and an elastomeric polymer binder.
-
公开(公告)号：US10584254B2
公开(公告)日：2020-03-10
申请号：US15310858
申请日：2015-05-15
发明人： Ramille N. Shah , Adam E. Jakus
IPC分类号： C09D11/104 , C09D11/033 , C09D11/037 , B29C64/165 , B33Y10/00 , B33Y70/00 , C09D11/03 , B29K67/00 , B29K105/16 , B29K505/00 , B29K507/04 , B29K509/02 , B29K511/00
摘要： 3D printable ink compositions for forming objects, films and coatings are provided. Also provided are methods of printing the ink compositions and methods for making the ink compositions. The ink compositions include an elastic polymer binder and may have high loadings of solid particles.
-
公开(公告)号：US10745782B2
公开(公告)日：2020-08-18
申请号：US15981078
申请日：2018-05-16
摘要： Magnesium alloys comprising a long period stacking order (LPSO) phase having an 14H-i or an 18R-i structure are provided. The alloys comprise magnesium as a majority element, a first alloying element that is larger than magnesium and a second alloying element that is smaller than magnesium.
-
公开(公告)号：US10508032B2
公开(公告)日：2019-12-17
申请号：US15073892
申请日：2016-03-18
IPC分类号： B01J21/08 , C01B15/026 , C07D301/12 , C07C29/145 , B01J37/06 , B01J37/08 , B01J37/34 , B01J35/00 , B01J23/06 , B01J23/14 , B01J23/20 , B01J23/22 , B01J23/26 , B01J23/28 , B01J23/30 , B01J23/34 , B01J23/36 , B01J23/46 , B01J23/72 , B01J23/75 , B01J27/22 , B01J35/10 , B01J37/02
摘要： Catalysts, catalytic systems and related synthetic methods for in situ production of H2O2 and use thereof in reaction with oxidizable substrates.
-
公开(公告)号：US10374262B2
公开(公告)日：2019-08-06
申请号：US15427295
申请日：2017-02-08
发明人： Muratahan Aykol , Soo Kim , Shiqiang Hao , Zhi Lu , Vinay Ishwar Hegde , David H. Snydacker , Scott J. Kirklin , Dane Morgan , Christopher M. Wolverton
IPC分类号： H01M10/42 , H01M10/0525 , H01M4/505 , H01M4/525
摘要： Cathode coatings for lithium ion batteries, cathodes coated with the coatings, and lithium ion batteries incorporating the coated cathodes are provided. The coatings, which are composed of binary, ternary, and higher order metal oxides and/or metalloid oxides, can reduce the hydrofluoric acid (HF)-induced degradation of the electrolyte and/or cathodes, thereby improving the performance of lithium ion batteries, relative to lithium ion batteries that employ bare cathodes.
-
公开(公告)号：US10476017B2
公开(公告)日：2019-11-12
申请号：US15767012
申请日：2016-10-11
摘要： Highly phase-pure, two-dimensional, multilayered organic-inorganic hybrid, halide perovskites are provided. Also provided are optoelectronic devices that incorporate the halide perovskites as photoactive materials.
-
公开(公告)号：US10472249B2
公开(公告)日：2019-11-12
申请号：US15770481
申请日：2016-11-01
IPC分类号： B01J39/02 , B01J39/09 , C02F1/42 , C01G30/00 , C09C1/00 , C09C1/30 , C02F1/28 , C02F101/00 , C02F101/20
摘要： Amorphous metal chalcogenides having the formula A2xSnxSb3-xQ6 are provided. In the chalcogenides, A is an alkali metal element, such as K or Cs, and Q is S or Se. The value of x can be in the range from 0.8 to 1. Porous chalcogenide materials made from the amorphous chalcogenides are also provided. These porous materials comprise metal chalcogenides having the formula (AB)2xSnxSb3-xQ6, wherein x is in the range from 0.8 to 1, A and B are two different alkali metal elements, and Q is S or Se.
-
8.发明授权公开(公告)号：US10385437B2
公开(公告)日：2019-08-20
申请号：US14994474
申请日：2016-01-13
发明人： John Harry Perepezko
摘要： Functional materials and methods for making the functional materials are provided. Also provided are methods for utilizing the functional materials in a variety of applications, including catalysis, adsorption, energy storage, and biomedical applications. The functional materials are made from metal alloys via an oxidative dealloying process that selectively removes one or more elements from the metal alloy and converts one or more of the remaining elements into a stable metal-oxygen matrix having a controlled porosity.
-
公开(公告)号：US10347790B2
公开(公告)日：2019-07-09
申请号：US15928774
申请日：2018-03-22
发明人： Zhenqiang Ma , Dong Liu
摘要： Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.
-
10.发明授权公开(公告)号：US10297714B1
公开(公告)日：2019-05-21
申请号：US15945947
申请日：2018-04-05
发明人： Zhenqiang Ma , Dong Liu
IPC分类号： H01L29/06 , H01L33/06 , H01L33/26 , H01L33/00 , H01L33/16 , H01L33/22 , H01L33/14 , H01L33/44 , H01L33/40
摘要： Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The light-emitting devices include: a tunneling heterojunction as a hole injector; an n-type contact; and a light-emitting active region disposed between the tunneling heterojunction and the n-type contact. The tunneling heterojunction facilitates interband tunneling hole injection under bias, whereby electrons in the valence band of a p-type group III-nitride semiconductor tunnel directly into the conduction band of the n-type doped semiconductor, resulting in the generation of holes in the p-type group III-nitride.
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.018 秒)
