Invention Grant
- Patent Title: Light emitting diode chip having a small area and slim thickness, light emitting device and electronic device including the same
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Application No.: US16166159Application Date: 2018-10-22
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Publication No.: US10359153B2Publication Date: 2019-07-23
- Inventor: Ye Seul Kim , Kyoung Wan Kim , Sang Won Woo , Ji Hye Kim
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2015-0144997 20151016; KR10-2015-0181128 20151217; KR10-2016-0107578 20160824
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/46 ; F21K9/232 ; H01L33/32 ; H01L33/06 ; H01L33/38 ; H01L33/62 ; H01L33/42 ; H01L33/00 ; H01L25/075 ; H05K1/18 ; G06F1/16 ; F21Y107/70 ; H01L33/22

Abstract:
A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.
Public/Granted literature
- US20190056070A1 COMPACT LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE INCLUDING THE SAME Public/Granted day:2019-02-21
Information query
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