Ultraviolet light emitting device having current blocking layer

    公开(公告)号:US10340418B2

    公开(公告)日:2019-07-02

    申请号:US15865051

    申请日:2018-01-08

    Abstract: Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a current blocking layer disposed on the second conductivity-type semiconductor layer; a transparent electrode layer covering the current blocking layer; a first electrode electrically connected to the first conductivity-type semiconductor layer; a second electrode disposed on the transparent electrode layer and electrically connected to the transparent electrode layer, the second electrode including a second electrode pad and a second electrode extension extending from the second electrode pad; and a second reflective layer interposed between the second electrode and the transparent electrode layer, wherein each of the second electrode pad and the second electrode extension covers at least part of the current blocking layer.

    Compact light emitting diode chip, light emitting device and electronic device including the same

    公开(公告)号:US10126831B2

    公开(公告)日:2018-11-13

    申请号:US15279549

    申请日:2016-09-29

    Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.

    LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME 有权
    发光二极管及其制造方法

    公开(公告)号:US20150076446A1

    公开(公告)日:2015-03-19

    申请号:US14385113

    申请日:2013-02-27

    Abstract: Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area.

    Abstract translation: 公开了一种发光二极管及其制造方法。 发光二极管包括具有多个通孔的GaN衬底; GaN基半导体堆叠结构,其放置在基板上并且包括第一导电型半导体层,有源层和第二导电型半导体层; 以及经由所述通孔与所述第一导电型半导体层电连接的第一电极。 发光二极管可以减少晶体缺陷并防止发光面积的减少。

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