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    Flip chip type light emitting diode chip
    1.
    发明授权
    Flip chip type light emitting diode chip 有权

    公开(公告)号：US10950757B2

    公开(公告)日：2021-03-16

    申请号：US16549556

    申请日：2019-08-23

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Tae Jun Park ,  Sang Won Woo

    IPC: H01L33/40 ,  H01L51/10 ,  H01S5/125

    Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.

    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    3.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 审中-公开
    具有电极板的发光二极管芯片

    公开(公告)号：US20170047483A1

    公开(公告)日：2017-02-16

    申请号：US15336510

    申请日：2016-10-27

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    IPC: H01L33/38 ,  H01L33/20 ,  H01L33/08 ,  H01L33/46 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42

    CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    Abstract translation: 本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

    Flip chip type light emitting device
    4.
    发明授权
    Flip chip type light emitting device 有权

    公开(公告)号：US11749784B2

    公开(公告)日：2023-09-05

    申请号：US17118731

    申请日：2020-12-11

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Tae Jun Park ,  Sang Won Woo

    IPC: H01L33/40 ,  H01S5/125 ,  H10K10/84

    CPC classification number: H01L33/405 ,  H01S5/125 ,  H10K10/84

    Abstract: A light emitting device includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers at least a portion of the light emitting structure, the transparent electrode and the contact electrode. The second insulating reflection layer is disposed on an opposite end of the substrate. The first and/or second insulating reflection layer have at least two regions which have different reflectivity properties.

    Light emitting diode and light emitting device having the same
    5.
    发明授权
    Light emitting diode and light emitting device having the same 有权

    公开(公告)号：US10923642B2

    公开(公告)日：2021-02-16

    申请号：US16426103

    申请日：2019-05-30

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Sang Won Woo ,  Ye Seul Kim ,  Tae Jun Park ,  Duk Il Suh

    IPC: H01L33/62 ,  H01L33/42 ,  H01L33/38

    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.

    Light emitting diode chip having electrode pad
    7.
    发明授权
    Light emitting diode chip having electrode pad 有权

    公开(公告)号：US10608141B2

    公开(公告)日：2020-03-31

    申请号：US15936321

    申请日：2018-03-26

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    IPC: H01L33/36 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L33/46 ,  H01L33/08

    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    LIGHT EMITTING ELEMENT
    8.
    发明申请
    LIGHT EMITTING ELEMENT 审中-公开

    公开(公告)号：US20180166608A1

    公开(公告)日：2018-06-14

    申请号：US15843847

    申请日：2017-12-15

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Duk Il Suh ,  Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

    IPC: H01L33/24 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L23/00 ,  H01L33/22

    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

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