Invention Grant
- Patent Title: Design-aware pattern density control in directed self-assembly graphoepitaxy process
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Application No.: US15926274Application Date: 2018-03-20
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Publication No.: US10361116B2Publication Date: 2019-07-23
- Inventor: Hsueh-Chung Chen , Cheng Chi , Lin Hu , Kafai Lai , Chi-Chun Liu , Jed W. Pitera
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; G06F17/50 ; H01L23/528 ; H01L23/522 ; H01L21/027
Abstract:
A method for local pattern density control of a device layout used by graphoepitaxy directed self-assembly (DSA) processes includes importing a multi-layer semiconductor device design into an assist feature system and determining overlapping regions between two or more layers in the multi-layer semiconductor device design using at least one Boolean operation. A fill for assist features is generated to provide dimensional consistency of device features by employing the overlapping regions to provide placement of the assist features. An updated device layout is stored in a memory device.
Public/Granted literature
- US20180211869A1 DESIGN-AWARE PATTERN DENSITY CONTROL IN DIRECTED SELF-ASSEMBLY GRAPHOEPITAXY PROCESS Public/Granted day:2018-07-26
Information query
IPC分类:
