Invention Grant
- Patent Title: Semiconductor device and power amplifier module
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Application No.: US15946552Application Date: 2018-04-05
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Publication No.: US10361666B2Publication Date: 2019-07-23
- Inventor: Isao Obu , Yasunari Umemoto , Masahiro Shibata , Kenichi Nagura
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP2017-085831 20170425
- Main IPC: H03F1/52
- IPC: H03F1/52 ; H01L23/00 ; H01L29/04 ; H03F3/213 ; H01L29/737 ; H01L27/02 ; H01L27/06 ; H01L29/08 ; H01L29/10 ; H01L29/205 ; H01L29/06 ; H01L21/265 ; H01L29/417 ; H01L29/423 ; H01L23/48 ; H01L29/861 ; H01L21/768 ; H03F3/195 ; H01L21/02 ; H01L29/36 ; H01L29/207 ; H01L29/45 ; H01L21/285 ; H01L21/3213 ; H01L21/027 ; H01L29/66 ; H01L21/306 ; H01L21/311 ; H03F1/56 ; H01L23/31 ; H01L23/29 ; H01L23/538 ; H01L25/16
Abstract:
A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.
Public/Granted literature
- US20180309417A1 SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE Public/Granted day:2018-10-25
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