An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).