公开(公告)号：US10800972B2

公开(公告)日：2020-10-13

申请号：US16511291

申请日：2019-07-15

申请人： Samsung Electronics Co., Ltd.

发明人： Hyo Sun Lee ,  Ho Young Kim ,  Sang Won Bae ,  Min Goo Kim ,  Jung Hun Lim ,  Yong Jae Choi

IPC分类号： C09K13/06 ,  C09K13/04 ,  C09K13/10 ,  H01L21/311 ,  H01L21/3213

摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

公开(公告)号：US20190338186A1

公开(公告)日：2019-11-07

申请号：US16511291

申请日：2019-07-15

申请人： Samsung Electronics Co., Ltd.

发明人： Hyo Sun Lee ,  Ho Young Kim ,  Sang Won Bae ,  Min Goo Kim ,  Jung Hun Lim ,  Yong Jae Choi

IPC分类号： C09K13/06 ,  H01L21/3213 ,  C09K13/04 ,  C09K13/10 ,  H01L21/311

摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

公开(公告)号：US10377948B2

公开(公告)日：2019-08-13

申请号：US15809597

申请日：2017-11-10

申请人： Samsung Electronics Co., Ltd.

发明人： Hyo Sun Lee ,  Ho Young Kim ,  Sang Won Bae ,  Min Goo Kim ,  Jung Hun Lim ,  Yong Jae Choi

IPC分类号： C09K13/04 ,  C09K13/06 ,  C09K13/10 ,  H01L21/311 ,  H01L21/3213

摘要： An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).