公开(公告)号：US10800972B2

公开(公告)日：2020-10-13

申请号：US16511291

申请日：2019-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Sun Lee ,  Ho Young Kim ,  Sang Won Bae ,  Min Goo Kim ,  Jung Hun Lim ,  Yong Jae Choi

IPC: C09K13/06 ,  C09K13/04 ,  C09K13/10 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

公开(公告)号：US20190338186A1

公开(公告)日：2019-11-07

申请号：US16511291

申请日：2019-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Sun Lee ,  Ho Young Kim ,  Sang Won Bae ,  Min Goo Kim ,  Jung Hun Lim ,  Yong Jae Choi

IPC: C09K13/06 ,  H01L21/3213 ,  C09K13/04 ,  C09K13/10 ,  H01L21/311

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

公开(公告)号：US12223444B2

公开(公告)日：2025-02-11

申请号：US17372788

申请日：2021-07-12

Applicant: Samsung Electronics Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Ho Young Kim ,  Won Woo Ro ,  Sung Ji Choi

IPC: G06N5/048 ,  G06F9/48 ,  G06F9/50

Abstract: Disclosed is an accelerator and a method of operating the accelerator including determining whether any group shares weights of a first group from among groups, determining a presence of an idle processing element (PE) array, in response to no group sharing the weights of the first group, and selecting a second group having a memory time overlapping a computation time of the first group from among the groups, in response to the idle PE array being present.

公开(公告)号：US11374161B2

公开(公告)日：2022-06-28

申请号：US16115717

申请日：2018-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Won Jong Jung ,  Ho Young Kim ,  Kak Namkoong ,  Yeol Ho Lee ,  Myoung Hoon Jung

IPC: B25J9/00 ,  H01L41/09 ,  B25J9/16 ,  B25J9/14 ,  B25J17/00 ,  B25J9/12 ,  F15B15/14 ,  B25J13/06 ,  F15B15/08

Abstract: An actuator according to an aspect of the present invention includes: a driving body including a plurality of conductive grains, a chamber configured to confine the plurality of conductive grains, and two or more electrodes disposed on a surface of the chamber; and a controller configured to obtain, through the two or more electrodes, a change in an electric signal, in response to a load applied to the chamber, and to adjust the load applied to the chamber based on the change in the electric signal.

公开(公告)号：US09710933B2

公开(公告)日：2017-07-18

申请号：US14815077

申请日：2015-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee Jun Shim ,  Soo Jung Ryu ,  Sang Heon Lee ,  Sun Min Kwon ,  Ho Young Kim ,  Seong Hoon Jeong

IPC: G06T11/00

CPC classification number: G06T11/001

Abstract: Provided is a method of processing a texture. The method includes acquiring texture position information in a texture image corresponding to pixel position information of pixels constituting a frame, acquiring texture classification information (TCI) representing a similarity between respective texture factors of two or more classified regions in the texture image based on the texture position information, determining an amount of texture data requested from a memory according to the TCI, and reading texture data corresponding to the determined amount of texture data based on the texture position information.

公开(公告)号：US10019349B2

公开(公告)日：2018-07-10

申请号：US14715683

申请日：2015-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Hoon Jeong ,  Woong Seo ,  Sang Heon Lee ,  Sun Min Kwon ,  Ho Young Kim ,  Hee Jun Shim

IPC: G06F12/00 ,  G06F12/02 ,  G06F12/06 ,  G06F12/0846

CPC classification number: G06F12/0207 ,  G06F12/0607 ,  G06F12/0846 ,  G06F2212/1016 ,  G06F2212/1056 ,  G06F2212/455

Abstract: A cache memory and a method of managing the same are provided. The method of managing a cache memory includes determining whether a number of bits of a data bandwidth stored in a bank is an integer multiple of a number of bits of unit data in data to be stored, storing first unit data, among the data to be stored, in a first region of a first address in the bank in response to the number of bits of the data bandwidth not being the integer multiple of the number of bits of the unit data, and storing part of second unit data, among the data to be stored, in a second region of the first address.

公开(公告)号：US11134189B2

公开(公告)日：2021-09-28

申请号：US16743102

申请日：2020-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Un Jeong ,  Ki Woon Kim ,  Chae Ryung Kim ,  Ho Young Kim ,  Eun Seung Yun ,  Han Soo Lee ,  Gyeong Han Cha

IPC: H04N5/228 ,  H04N5/232 ,  H03L7/18 ,  H03L7/08

Abstract: An image device may include a clock generator to generate a first output clock of a first frequency, a link layer to generate a control signal for changing the first frequency and output first parallel data including first frame information, a detector to generate a collision avoidance command to change the first frequency to a second frequency during a vertical blanking time, and a frequency changer to receive the collision avoidance command from the detector and transmit a frequency change command to the link layer. The link layer transmits the control signal to the clock generator based on the frequency change command. The vertical blanking time is a time period from a first time point at which the first parallel data is not output from the link layer to a second time point at which second parallel data is output.

公开(公告)号：US10377948B2

公开(公告)日：2019-08-13

申请号：US15809597

申请日：2017-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Sun Lee ,  Ho Young Kim ,  Sang Won Bae ,  Min Goo Kim ,  Jung Hun Lim ,  Yong Jae Choi

IPC: C09K13/04 ,  C09K13/06 ,  C09K13/10 ,  H01L21/311 ,  H01L21/3213

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).