Invention Grant
- Patent Title: Semiconductor device and power control device
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Application No.: US15702327Application Date: 2017-09-12
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Publication No.: US10396547B2Publication Date: 2019-08-27
- Inventor: Ryo Kanda , Hiroshi Kuroiwa , Tetsu Toda , Yasushi Nakahara
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-180786 20160915
- Main IPC: H02H7/08
- IPC: H02H7/08 ; H02H1/04 ; H01L29/40 ; H01L29/78 ; H01L29/861 ; H03K17/0416 ; H03K17/082

Abstract:
To realize a reduction in the number of parts in a system including a driver IC (semiconductor device). A high potential side power supply voltage is applied to a power supply application area. A high side area is formed with a circuit which includes a driver driving a high side transistor and is operated at a boot power supply voltage with a floating voltage as a reference. A low side area is formed with a circuit operated at a power supply voltage with a low potential side power supply voltage as a reference. A first termination area is disposed in a ring form so as to surround the power supply application area. A second termination area is disposed in a ring form so as to surround the high side area.
Public/Granted literature
- US20180076614A1 SEMICONDUCTOR DEVICE AND POWER CONTROL DEVICE Public/Granted day:2018-03-15
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