公开(公告)号：US10396547B2

公开(公告)日：2019-08-27

申请号：US15702327

申请日：2017-09-12

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryo Kanda ,  Hiroshi Kuroiwa ,  Tetsu Toda ,  Yasushi Nakahara

IPC: H02H7/08 ,  H02H1/04 ,  H01L29/40 ,  H01L29/78 ,  H01L29/861 ,  H03K17/0416 ,  H03K17/082

Abstract: To realize a reduction in the number of parts in a system including a driver IC (semiconductor device). A high potential side power supply voltage is applied to a power supply application area. A high side area is formed with a circuit which includes a driver driving a high side transistor and is operated at a boot power supply voltage with a floating voltage as a reference. A low side area is formed with a circuit operated at a power supply voltage with a low potential side power supply voltage as a reference. A first termination area is disposed in a ring form so as to surround the power supply application area. A second termination area is disposed in a ring form so as to surround the high side area.

公开(公告)号：US09667142B2

公开(公告)日：2017-05-30

申请号：US14030055

申请日：2013-09-18

Applicant: Renesas Electronics Corporation

Inventor： Hiroshi Kuroiwa ,  Osamu Yamashita ,  Masahiro Ishihara ,  Minoru Kurosawa

IPC: G05F1/00 ,  H02M3/157 ,  H02M3/158 ,  H02M1/00

CPC classification number: H02M3/157 ,  H02M3/158 ,  H02M2001/009

Abstract: A power supply device is responsive to load changes. The power supply device includes a switch control circuit, a charge control circuit, and a discharge control circuit. The switch control circuit controls switches so that electrical power is charged into an inductor, discharged from the inductor, and distributed to first and second capacitors in a time-division manner based on a switching cycle. The charge control circuit controls the amount of electrical power to be charged into the inductor based on a first amount of error between a first output power supply voltage and its target value and a second amount of error between a second output power supply voltage and its target value. The discharge control circuit controls a distribution ratio at which the electrical power discharged from the inductor is distributed to the first and second capacitors based on the ratio between the first and second amounts of error.

公开(公告)号：US20170019093A1

公开(公告)日：2017-01-19

申请号：US15157040

申请日：2016-05-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryo KANDA ,  Koichi Yamazaki ,  Hiroshi Kuroiwa ,  Masatoshi Maeda ,  Tetsu Toda

IPC: H03K17/082 ,  H03K17/567 ,  H03K5/24 ,  H03K3/356 ,  H03K5/01

CPC classification number: H03K17/0822 ,  H01L23/528 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/404 ,  H01L29/7823 ,  H01L29/7835 ,  H01L2224/0603 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2924/00014 ,  H03K3/356 ,  H03K3/356113 ,  H03K5/01 ,  H03K5/04 ,  H03K5/24 ,  H03K5/2472 ,  H03K5/2481 ,  H03K17/567 ,  H03K2217/0081 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been determined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.

Abstract translation: 驱动器IC包括环形终止区域，以及分别布置在布局上的终止区域的内部和内部的第一区域和第二区域。 布置在浮动端子和第一感测节点之间并以电源电压驱动的感测MOS形成在终端区域中。 一种故障检测电路，当第一感测节点的电压高于在低侧驱动器将低侧晶体管驱动为导通状态的时间段中预先确定的判定电压时，检测故障的存在 形成在第一区域。

公开(公告)号：US09621151B2

公开(公告)日：2017-04-11

申请号：US15157040

申请日：2016-05-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryo Kanda ,  Koichi Yamazaki ,  Hiroshi Kuroiwa ,  Masatoshi Maeda ,  Tetsu Toda

IPC: H03K3/00 ,  H03K17/082 ,  H03K3/356 ,  H03K5/01 ,  H03K5/24 ,  H03K17/567 ,  H01L23/528 ,  H01L23/00

CPC classification number: H03K17/0822 ,  H01L23/528 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/404 ,  H01L29/7823 ,  H01L29/7835 ,  H01L2224/0603 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2924/00014 ,  H03K3/356 ,  H03K3/356113 ,  H03K5/01 ,  H03K5/04 ,  H03K5/24 ,  H03K5/2472 ,  H03K5/2481 ,  H03K17/567 ,  H03K2217/0081 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been deteLutined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.

公开(公告)号：US10224921B2

公开(公告)日：2019-03-05

申请号：US15444876

申请日：2017-02-28

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryo Kanda ,  Koichi Yamazaki ,  Hiroshi Kuroiwa ,  Masatoshi Maeda ,  Tetsu Toda

IPC: H03K17/082 ,  H03K17/567 ,  H03K5/01 ,  H03K5/24 ,  H03K3/356 ,  H03K5/04 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L23/528 ,  H01L23/00

Abstract: A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been determined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.