Invention Grant
- Patent Title: Compact non-volatile memory device
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Application No.: US14849257Application Date: 2015-09-09
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Publication No.: US10403368B2Publication Date: 2019-09-03
- Inventor: François Tailliet , Marc Battista
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater Matsil, LLP
- Priority: FR1461339 20141124
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C8/08 ; G11C8/10 ; G11C16/14 ; G11C16/08 ; G11C8/12 ; G11C8/14 ; G11C16/04

Abstract:
A non-volatile memory device includes a matrix memory plane with columns of memory words respectively formed on each row of the memory plane by groups of memory cells and control elements respectively associated with the memory words of each row. At least some of the control elements associated with the memory words of the corresponding row form at least one control block of B control elements disposed next to one another, adjacent to a memory block containing the B memory words disposed next to one another and associated with these B control elements, a first electrically-conducting link connecting one of the B control elements to all the control electrodes of the state transistors of the corresponding group of memory cells and B-1 second electrically-conducting link(s) respectively connecting the B-1 control element(s) to all the control electrodes of the state transistors of the B-1 corresponding group(s) of memory cells.
Public/Granted literature
- US20160148697A1 Compact Non-Volatile Memory Device Public/Granted day:2016-05-26
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