Invention Grant
- Patent Title: Memory device for a dynamic random access memory
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Application No.: US15729532Application Date: 2017-10-10
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Publication No.: US10403627B2Publication Date: 2019-09-03
- Inventor: Jan Van Houdt , Julien Ryckaert , Hyungrock Oh
- Applicant: IMEC vzw
- Applicant Address: BE Leuven
- Assignee: IMEC vzw
- Current Assignee: IMEC vzw
- Current Assignee Address: BE Leuven
- Agency: Knobbe Martens Olson & Bear, LLP
- Priority: EP16193247 20161011
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C5/02 ; H01L23/528 ; H01L27/108 ; G11C11/405 ; H01L21/8254 ; G11C11/4097 ; G11C13/00 ; G11C5/04 ; H01L25/065 ; G11C11/4076 ; H01L49/02 ; G11C11/4094

Abstract:
The disclosed technology relates to a memory device for a dynamic random access memory, or DRAM. In one aspect, the memory device includes a substrate supporting a semiconductor device layer in which a plurality of semiconductor devices are formed. The memory device may further include an interconnection portion formed above the substrate and including a number of metallization levels and dielectric layers, the interconnection portion being adapted to interconnect said semiconductor devices. The memory device may further include a plurality of bit cell stacks arranged in the interconnection portion, each bit cell stack including a plurality of bit cells. Further, such bit cells may include elements such as a charge storage element, a write transistor, and a read transistor.
Public/Granted literature
- US20180102365A1 MEMORY DEVICE FOR A DYNAMIC RANDOM ACCESS MEMORY Public/Granted day:2018-04-12
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