Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15951966Application Date: 2018-04-12
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Publication No.: US10411088B2Publication Date: 2019-09-10
- Inventor: Chang-Po Hsiung , Ping-Hung Chiang , Shih-Chieh Pu , Chia-Lin Wang , Nien-Chung Li , Wen-Fang Lee , Shih-Yin Hsiao , Chih-Chung Wang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/06 ; H01L29/51 ; H01L21/762 ; H01L21/8234 ; H01L29/423 ; H01L21/311
Abstract:
A semiconductor device including a substrate and a shallow trench isolation (STI) structure is provided. The substrate has a first voltage area and a second voltage area. A top surface of the substrate in the second voltage area is higher than a top surface of the substrate in the first voltage area, and a trench is defined in the substrate in between the first and second voltage area. The STI structure is located in the substrate within the trench, wherein a first portion of the STI structure is located in the first voltage area, a second portion of the STI structure is located in the second voltage area, and a step height difference exist in between a bottom surface of the first portion of the STI structure in the first voltage area and a bottom surface of the second portion of the STI structure in the second voltage area.
Public/Granted literature
- US20180233556A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-08-16
Information query
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