Invention Grant
- Patent Title: Etching method and etching apparatus
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Application No.: US15906862Application Date: 2018-02-27
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Publication No.: US10418254B2Publication Date: 2019-09-17
- Inventor: Kazunori Shinoda , Naoyuki Kofuji , Hiroyuki Kobayashi , Nobuya Miyoshi , Kohei Kawamura , Masaru Izawa , Kenji Ishikawa , Masaru Hori
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge PC
- Priority: JP2017-159969 20170823
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/3213 ; H01L27/115 ; H01J37/00 ; H01L21/3065
Abstract:
In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.
Public/Granted literature
- US20190067032A1 ETCHING METHOD AND ETCHING APPARATUS Public/Granted day:2019-02-28
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