- 专利标题： Etching method and etching apparatus
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申请号： US15906862申请日： 2018-02-27
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公开(公告)号： US10418254B2公开(公告)日： 2019-09-17
- 发明人: Kazunori Shinoda , Naoyuki Kofuji , Hiroyuki Kobayashi , Nobuya Miyoshi , Kohei Kawamura , Masaru Izawa , Kenji Ishikawa , Masaru Hori
- 申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge PC
- 优先权： JP2017-159969 20170823
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L21/3213 ; H01L27/115 ; H01J37/00 ; H01L21/3065
摘要：
In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.
公开/授权文献
- US20190067032A1 ETCHING METHOD AND ETCHING APPARATUS 公开/授权日：2019-02-28
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