公开(公告)号：US10418254B2

公开(公告)日：2019-09-17

申请号：US15906862

申请日：2018-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazunori Shinoda ,  Naoyuki Kofuji ,  Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kohei Kawamura ,  Masaru Izawa ,  Kenji Ishikawa ,  Masaru Hori

IPC: H01L21/67 ,  H01L21/3213 ,  H01L27/115 ,  H01J37/00 ,  H01L21/3065

Abstract: In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.

公开(公告)号：US10325781B2

公开(公告)日：2019-06-18

申请号：US15698823

申请日：2017-09-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazunori Shinoda ,  Satoshi Sakai ,  Masaru Izawa ,  Nobuya Miyoshi ,  Hiroyuki Kobayashi ,  Yutaka Kouzuma ,  Kenji Ishikawa ,  Masaru Hori

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/67 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.