公开(公告)号：USD900760S1

公开(公告)日：2020-11-03

申请号：US29677753

申请日：2019-01-23

申请人： Hitachi High-Technologies Corporation

设计人： Yutaka Kouzuma ,  Michiaki Kobayashi ,  Kazuyuki Hirozane ,  Kohei Kawamura ,  Nobuya Miyoshi ,  Hiroyuki Kobayashi

公开(公告)号：US10418254B2

公开(公告)日：2019-09-17

申请号：US15906862

申请日：2018-02-27

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Kazunori Shinoda ,  Naoyuki Kofuji ,  Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kohei Kawamura ,  Masaru Izawa ,  Kenji Ishikawa ,  Masaru Hori

IPC分类号： H01L21/67 ,  H01L21/3213 ,  H01L27/115 ,  H01J37/00 ,  H01L21/3065

摘要： In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.