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公开(公告)号：US10192720B2
公开(公告)日：2019-01-29
申请号：US15210257
申请日：2016-07-14
发明人： Hiroyuki Kobayashi , Nobuya Miyoshi , Kazunori Shinoda , Kenji Maeda , Satoshi Sakai , Masaru Izawa
摘要： A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.
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公开(公告)号：US10141207B2
公开(公告)日：2018-11-27
申请号：US15468259
申请日：2017-03-24
摘要： A vacuum processing apparatus includes a processing chamber inside a vacuum vessel, a plasma forming chamber above, a dielectric plate member having multiple through-holes for introducing particles of plasma to the processing chamber between the processing chamber and the plasma forming chamber above a sample stage upper surface in the processing chamber, heating lamp arranged around an outer periphery of the plate member to irradiate an electromagnetic wave to the wafer to heat, and a ring-shaped window member for transmitting the electromagnetic wave from the lamp. The apparatus performs, from the through-holes to the wafer, supplying particles of plasma formed in the plasma forming chamber to form a reaction product, extinguishing the plasma and heating the wafer to desorb the product, and supplying particles, formed in the plasma forming chamber, of the plasma of cleaning gas to the plasma forming chamber, the processing chamber, and the window member.
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公开(公告)号：US10290472B2
公开(公告)日：2019-05-14
申请号：US15072392
申请日：2016-03-17
发明人： Hiroyuki Kobayashi , Nobuya Miyoshi , Kazunori Shinoda , Kenji Maeda , Yutaka Kouzuma , Satoshi Sakai , Masaru Izawa
摘要： In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.
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公开(公告)号：US10418254B2
公开(公告)日：2019-09-17
申请号：US15906862
申请日：2018-02-27
发明人： Kazunori Shinoda , Naoyuki Kofuji , Hiroyuki Kobayashi , Nobuya Miyoshi , Kohei Kawamura , Masaru Izawa , Kenji Ishikawa , Masaru Hori
IPC分类号： H01L21/67 , H01L21/3213 , H01L27/115 , H01J37/00 , H01L21/3065
摘要： In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.
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公开(公告)号：US09754762B2
公开(公告)日：2017-09-05
申请号：US15322659
申请日：2015-06-08
IPC分类号： H01J37/22 , H01J37/20 , H01J37/244 , H01J37/28
CPC分类号： H01J37/22 , H01J37/20 , H01J37/244 , H01J37/28 , H01J37/295 , H01J2237/20207 , H01J2237/2802
摘要： Provided are a device and a method allowing a crystal orientation to be adjusted with adequate throughput and high precision to observe a sample, regardless of the type of the sample or the crystal orientation. In the present invention, the method comprises: setting a fitting circular pattern (26) displayed overlaid so that a main spot (23) is positioned on the circumference thereof, on the basis of the diffraction spot brightness distribution in an electron diffraction pattern (22b) displayed on a display unit (13); setting a vector (28) displayed with the starting point at the center position (27) of the displayed circular pattern (26), and the end point at the location of the main spot (23) positioned on the circumference of the circular pattern (26); and adjusting the crystal orientation on the basis of the orientation and the magnitude of the displayed vector (28).
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公开(公告)号：US09607874B2
公开(公告)日：2017-03-28
申请号：US14851996
申请日：2015-09-11
发明人： Hiroyuki Kobayashi , Tomoyuki Tamura , Masaki Ishiguro , Shigeru Shirayone , Kazuyuki Ikenaga , Makoto Nawata
IPC分类号： H01L21/302 , H01L21/461 , H01L21/683 , H01L21/3065 , H01L21/311 , H01J37/32
CPC分类号： H01L21/6833 , H01J37/3244 , H01J37/32477 , H01J37/32504 , H01J37/32577 , H01L21/3065 , H01L21/31116 , H01L21/31138
摘要： A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped.
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公开(公告)号：US20150371825A1
公开(公告)日：2015-12-24
申请号：US14627022
申请日：2015-02-20
IPC分类号： H01J37/32 , C23C16/44 , C23C16/455 , C23C16/50
CPC分类号： C23C16/45565 , H01J37/32192 , H01J37/32211 , H01J37/32477 , H01J37/32623
摘要： A plasma processing apparatus in which high frequency power to generate plasma supplied from a high frequency power supply is introduced into a processing chamber via a top plate and a shower plate and a member to be processed mounted on a stage electrode is processed, wherein a grounded spacer whose base material is a metal is installed between the shower. plate and an inner cylinder.
摘要翻译： 一种等离子体处理装置，其中将从高频电源供应的产生等离子体的高频功率通过顶板和喷淋板引导到处理室中，并处理安装在载物台电极上的待加工构件，其中接地 基座材料为金属的间隔件安装在淋浴间之间。 板和内筒。
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公开(公告)号：US09818576B2
公开(公告)日：2017-11-14
申请号：US15022436
申请日：2014-10-31
发明人： Takashi Kubo , Hiroyuki Kobayashi
CPC分类号： H01J37/222 , H01J37/10 , H01J37/22 , H01J37/261 , H01J37/263 , H01J2237/045 , H01J2237/103 , H01J2237/221 , H01J2237/248 , H01J2237/2602
摘要： To improve the workability of the task of adjusting the position of a limit field diaphragm. An electron microscope provided with an image-capturing means for capturing an image of an observation visual field prior to insertion of a limit field diaphragm as a map image, a recording means for recording the map image, an extraction means for capturing an image of the observation visual field after insertion of the limit field diaphragm and extracting the outline of the diaphragm, a drawing means for drawing the outline on the map image, and a display means for displaying the image drawn by the drawing means.
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公开(公告)号：US09129772B2
公开(公告)日：2015-09-08
申请号：US14289092
申请日：2014-05-28
IPC分类号： G01N23/00 , G21K5/08 , H01J37/20 , G01N23/225 , H01J37/26 , G01N23/04 , G01N1/28 , G01N1/40 , H01J37/30
CPC分类号： H01J37/20 , G01N1/2813 , G01N23/04 , G01N23/2251 , G01N2001/4027 , H01J37/26 , H01J37/261 , H01J37/3007 , H01J2237/2002 , H01J2237/20214 , H01J2237/204 , H01J2237/206
摘要： Provided is means which enables observation of the shape of a specimen as it is without deforming the specimen. Observation is made by allowing a specimen-holding member having an opening (for example, microgrid and mesh) to hold an ionic liquid and charging a specimen thereto, to allow the specimen to suspend in the ionic liquid. Furthermore, in the proximity of the specimen-holding member, a mechanism of injecting an ionic liquid (ionic liquid introduction mechanism) and/or an electrode are provided. When a voltage is applied to the electrode, the specimen moves or deforms in the ionic liquid. How the specimen moves or deforms can be observed. Furthermore, in the proximity of specimen-holding member, an evaporation apparatus is provided to enable charge of the specimen into the ionic liquid while evaporating. Furthermore, in the proximity of the specimen-holding member, a microcapillary is provided to charge a liquid-state specimen into the ionic liquid. Note that the specimen-holding member is designed to be rotatable.
摘要翻译： 提供能够在不使样本变形的情况下观察样本的形状的装置。 通过允许具有开口的样本保持构件（例如，微网和网格）来保持离子液体并向其中充入试样以允许样品悬浮在离子液体中进行观察。 此外，在试样保持构件附近设置有注入离子液体（离子液体导入机构）和/或电极的机构。 当电极施加电压时，样品在离子液体中移动或变形。 可以观察样品移动或变形。 此外，在试样保持构件附近，设置蒸发装置，以使得能够在蒸发时将试样充入离子液体中。 此外，在样本保持部件附近，设置微毛细管，以将液态标本充入离子液体。 注意，试样保持构件被设计成可旋转。
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公开(公告)号：US09038567B2
公开(公告)日：2015-05-26
申请号：US14262466
申请日：2014-04-25
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , H01J37/32 , H01L21/3065 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译： 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。
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