Invention Grant
- Patent Title: Positive temperature coefficient bias compensation circuit
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Application No.: US15908469Application Date: 2018-02-28
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Publication No.: US10439563B2Publication Date: 2019-10-08
- Inventor: Tsuyoshi Takagi , Tero Tapio Ranta , Keith Bargroff , Christopher C. Murphy , Robert Mark Englekirk
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent John Land, Esq.
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F3/213 ; H03G3/30 ; H03F3/195 ; H03F3/68 ; H03F1/56 ; H03F3/24 ; H03F3/45

Abstract:
Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. Other embodiments include bias compensation circuits that directly regulate a bias signal to an amplifier stage as a function of localized heating of one or more of amplifier stages. Such bias compensation circuits include physical placement of at least one bias compensation circuit element in closer proximity to at least one amplifier stage than other bias compensation circuit elements. One bias compensation circuit embodiment includes a temperature-sensitive current mirror circuit for regulating the bias signal. Another bias compensation circuit embodiment includes a temperature-sensitive element having a positive temperature coefficient (PTC) for regulating the bias signal.
Public/Granted literature
- US20180262166A1 Positive Temperature Coefficient Bias Compensation Circuit Public/Granted day:2018-09-13
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