Invention Grant
- Patent Title: Cut inside replacement metal gate trench to mitigate N-P proximity effect
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Application No.: US15783549Application Date: 2017-10-13
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Publication No.: US10446550B2Publication Date: 2019-10-15
- Inventor: Balaji Kannan , Ayse M. Ozbek , Tao Chu , Bala Haran , Vishal Chhabra , Katsunori Onishi , Guowei Xu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Michael Pagette; Andrew M. Calderon
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/06 ; H01L27/02 ; H01L21/311 ; H01L29/66 ; H01L21/8234 ; H01L21/027 ; H01L21/8238 ; H01L29/51 ; H01L27/11

Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.
Public/Granted literature
- US20190115346A1 CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY EFFECT Public/Granted day:2019-04-18
Information query
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