- 专利标题： MRAM reference cell with shape anisotropy to establish a well-defined magnetization orientation between a reference layer and a storage layer
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申请号： US15891233申请日： 2018-02-07
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公开(公告)号： US10460779B2公开(公告)日： 2019-10-29
- 发明人: Michael Gaidis , Thao Tran
- 申请人： Crocus Technology Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： CROCUS TECHNOLOGY INC.
- 当前专利权人： CROCUS TECHNOLOGY INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Cooley LLP
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; H01L43/08 ; H01F10/32 ; H01L43/12 ; H01L27/22 ; H01L43/02
摘要：
An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.
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