Invention Grant
- Patent Title: Silicon wafer having complex structure, fabrication method therefor and solar cell using same
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Application No.: US14906764Application Date: 2013-12-20
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Publication No.: US10468547B2Publication Date: 2019-11-05
- Inventor: Chae Hwan Jeong , Jong Hwan Lee , Ho Sung Kim , Chang Heon Kim
- Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
- Applicant Address: KR Chungcheongnam-Do
- Assignee: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
- Current Assignee Address: KR Chungcheongnam-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0088001 20130725; KR10-2013-0088015 20130725
- International Application: PCT/KR2013/011930 WO 20131220
- International Announcement: WO2015/012457 WO 20150129
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/068 ; H01L31/0236 ; H01L31/0352 ; H01L31/028

Abstract:
Disclosed are a silicon wafer having a complex structure, a method of fabricating the same, and a solar cell using the same, wherein the silicon wafer is configured such that an oriented silicon wafer has a pyramid pattern formed through wet etching and additionally has nanowires formed in the direction in which silicon crystals are oriented on the pyramid pattern, and is further doped with POCl3.
Public/Granted literature
- US20160181455A1 SILICON WAFER HAVING COMPLEX STRUCTURE, FABRICATION METHOD THEREFOR AND SOLAR CELL USING SAME Public/Granted day:2016-06-23
Information query
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