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    Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam
    1.
    发明授权
    Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam 有权

    公开(公告)号：US09680047B2

    公开(公告)日：2017-06-13

    申请号：US14437087

    申请日：2012-12-18

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

    IPC: H01L31/18 ,  H01L31/068 ,  C23C14/58

    CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

    METHOD FOR MANUFACTURING SOLAR CELLS HAVING NANO-MICRO COMPOSITE STRUCTURE ON SILICON SUBSTRATE AND SOLAR CELLS MANUFACTURED THEREBY
    2.
    发明申请
    METHOD FOR MANUFACTURING SOLAR CELLS HAVING NANO-MICRO COMPOSITE STRUCTURE ON SILICON SUBSTRATE AND SOLAR CELLS MANUFACTURED THEREBY 有权
    制造具有纳米微复合结构的太阳能电池的方法在硅基板和太阳能电池上制造

    公开(公告)号：US20150270425A1

    公开(公告)日：2015-09-24

    申请号：US14437183

    申请日：2012-12-18

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Jong Hwan Lee ,  Chang Heon Kim ,  Ho Sung Kim

    IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0224

    CPC classification number: H01L31/035227 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention relates to a method for manufacturing solar cells having a nano-micro composite structure on a silicon substrate and solar cells manufactured thereby. The technical problem to be solved is to provide a method for manufacturing solar cells and solar cells manufactured thereby, the method being capable of forming micro wires in various sizes according to the lithographic design of a photoresist and forming nano wires, which have various sizes and aspect ratios, by adjusting the concentration of a wet etching solution and immersion time. To this end, the present invention provides a method for manufacturing solar cells and solar cells manufactured thereby, the method comprising the steps of: preparing a first conductive semiconductor substrate having a first surface and a second surface; patterning a photoresist on the second surface of the first conductive semiconductor substrate such that the plane form of the photoresist becomes a form in which multiple horizontal lines and multiple vertical lines intersect each other; electrolessly etching the semiconductor substrate so as to form a micro wire having a width of 1-3 μm and a height of 3-5 μm in a region corresponding to the photoresist and to form multiple nano wires having a width of 1-100 nm and a height of 1-3 μm in a region not corresponding to the photoresist; doping the micro wire and nano wires with a second conductive impurity by using POCl3; forming a first electrode on the first surface of the semiconductor substrate; and forming a second electrode on the micro wire, wherein the efficiency of the solar cells is 10-13%, the efficiency being the ratio of output to incident light energy per unit area.

    Abstract translation: 本发明的一个实施例涉及一种在硅衬底上制造具有纳米微复合结构的太阳能电池的制造方法以及由此制造的太阳能电池。 要解决的技术问题是提供一种用于制造太阳能电池和太阳能电池的方法，所述方法能够根据光致抗蚀剂的平版印刷设计形成各种尺寸的微细线，并形成具有各种尺寸和尺寸的纳米线 通过调整湿蚀刻溶液的浓度和浸渍时间来确定长宽比。 为此，本发明提供一种制造太阳能电池和太阳能电池的方法，所述方法包括以下步骤：制备具有第一表面和第二表面的第一导电半导体衬底; 在第一导电半导体衬底的第二表面上图案化光致抗蚀剂，使得光致抗蚀剂的平面形式成为多个水平线和多个垂直线彼此相交的形式; 化学蚀刻半导体衬底，以在与光致抗蚀剂相对应的区域中形成宽度为1-3μm，高度为3-5μm的微细线，并形成宽度为1-100nm的多根纳米线，以及 在不对应于光致抗蚀剂的区域中的高度为1-3μm; 通过使用POCl3，用第二导电杂质掺杂微丝和纳米线; 在所述半导体衬底的第一表面上形成第一电极; 以及在所述微细线上形成第二电极，其中所述太阳能电池的效率为10-13％，所述效率是每单位面积的输出与入射光能的比率。

    METHOD FOR PREPARING SOLID ELECTROLYTE FOR SOLID OXIDE FUEL CELL, AND METHOD FOR PREPARING UNIT CELL
    4.
    发明申请
    METHOD FOR PREPARING SOLID ELECTROLYTE FOR SOLID OXIDE FUEL CELL, AND METHOD FOR PREPARING UNIT CELL 审中-公开
    固体氧化物燃料电池固体电解质的制备方法及制备单元电池的方法

    公开(公告)号：US20160079623A1

    公开(公告)日：2016-03-17

    申请号：US14787446

    申请日：2013-08-20

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Ho Sung Kim ,  Seong Jae Boo ,  Chae Hwan Jeong ,  Ik Hyun Oh ,  Hyeon Jong Jeon ,  Min Young Kim

    IPC: H01M8/12

    CPC classification number: H01M8/1246 ,  H01M8/1253 ,  H01M2008/1293 ,  H01M2300/0071 ,  H01M2300/0077 ,  Y02E60/525 ,  Y02P70/56

    Abstract: Provided are a method for preparing a solid electrolyte material for a cheap solid oxide fuel cell capable of implementing high ion conductivity at a medium-low temperature of 800° C. or lower, and a method for preparing a unit cell of a solid oxide fuel cell by using the same. The method for preparing a solid electrolyte material for a solid oxide fuel cell comprises: providing a starting material comprising ytterbium nitrate [Yb(NO3)3.H2O], scandium nitrate [Sc(NO3)3.H2O] and zirconium oxychloride [ZrOCl2.H2O] in a ratio of 6:4:90 by mol; forming a mixture metal salt aqueous solution by dissolving the starting material; forming a precursor by mixing the mixture metal salt aqueous solution and a chelating agent and coprecipitating the obtained mixture; washing the precursor by providing ultrapure water multiple times; filtering the washed precursor by using a vacuum filtration apparatus; and forming a solid electrolyte powder by heat treating the filtered precursor.

    Abstract translation: 提供一种在800℃以下的中低温下能够实现高离子传导性的便宜的固体氧化物型燃料电池用固体电解质材料的制造方法，以及制备固体氧化物燃料的单电池的方法 细胞使用相同。 制备用于固体氧化物燃料电池的固体电解质材料的方法包括：提供包含硝酸镱[Yb（NO 3）3·H 2 O]，硝酸钪[Sc（NO 3）3·H 2 O]和氧氯化锆[ZrOCl 2]的原料。 H 2 O]，其比例为6:4:90; 通过溶解原料形成混合金属盐水溶液; 通过混合所述混合金属盐水溶液和螯合剂形成前体并共沉淀所得混合物; 通过提供超纯水多次洗涤前体; 使用真空过滤装置过滤洗涤的前体; 并通过热处理过滤的前体形成固体电解质粉末。

    Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam
    6.
    发明授权
    Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam 有权

    公开(公告)号：US10069031B2

    公开(公告)日：2018-09-04

    申请号：US15592421

    申请日：2017-05-11

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

    IPC: H01L31/18 ,  H01L31/068 ,  C23C14/58 ,  H01L31/028

    Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM
    8.
    发明申请
    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM 审中-公开

    公开(公告)号：US20170250303A1

    公开(公告)日：2017-08-31

    申请号：US15592421

    申请日：2017-05-11

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

    IPC: H01L31/18 ,  H01L31/028

    CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

    Method for manufacturing solar cells having nano-micro composite structure on silicon substrate and solar cells manufactured thereby
    10.
    发明授权
    Method for manufacturing solar cells having nano-micro composite structure on silicon substrate and solar cells manufactured thereby 有权

    公开(公告)号：US09972732B2

    公开(公告)日：2018-05-15

    申请号：US15368024

    申请日：2016-12-02

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Jong Hwan Lee ,  Chang Heon Kim ,  Ho Sung Kim

    IPC: H01L31/0352 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0224

    CPC classification number: H01L31/035227 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention relates to a method for manufacturing solar cells having a nano-micro composite structure on a silicon substrate and solar cells manufactured thereby. The technical problem to be solved is to provide a method for manufacturing solar cells and solar cells manufactured thereby, the method being capable of forming micro wires in various sizes according to the lithographic design of a photoresist and forming nano wires, which have various sizes and aspect ratios, by adjusting the concentration of a wet etching solution and immersion time. To this end, the present invention provides a method for manufacturing solar cells and solar cells manufactured thereby, the method comprising the steps of: preparing a first conductive semiconductor substrate having a first surface and a second surface; patterning a photoresist on the second surface of the first conductive semiconductor substrate such that the plane form of the photoresist becomes a form in which multiple horizontal lines and multiple vertical lines intersect each other; electrolessly etching the semiconductor substrate so as to form a micro wire having a width of 1-3 μm and a height of 3-5 μm in a region corresponding to the photoresist and to form multiple nano wires having a width of 1-100 nm and a height of 1-3 μm in a region not corresponding to the photoresist; doping the micro wire and nano wires with a second conductive impurity by using POCl3; forming a first electrode on the first surface of the semiconductor substrate; and forming a second electrode on the micro wire, wherein the efficiency of the solar cells is 10-13%, the efficiency being the ratio of output to incident light energy per unit area.

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