CIS/CGS/CIGS THIN-FILM MANUFACTURING METHOD AND SOLAR CELL MANUFACTURED BY USING THE SAME
    1.
    发明申请
    CIS/CGS/CIGS THIN-FILM MANUFACTURING METHOD AND SOLAR CELL MANUFACTURED BY USING THE SAME 审中-公开
    CIS / CGS / CIGS薄膜制造方法和使用其制造的太阳能电池

    公开(公告)号:US20150263210A1

    公开(公告)日:2015-09-17

    申请号:US14428349

    申请日:2012-12-26

    Abstract: Provided are a CIS/CGS/CIGS thin-film manufacturing method and a solar cell manufactured by using the same. The CIS/CGS/CIGS thin-film manufacturing method enables CIS, CGS, and CIGS thin-films through depositing an electrode layer on a substrate and depositing a light absorber layer by sputtering a single target of each of CIS including copper (Cu), indium (In), and selenium (Se) and CGS copper (Cu), gallium (Ga) and selenium (Se). In addition, a solar cell having excellent structural, optical and electrical properties is prepared by using the same. Thus, a thin-film can be prepared by depositing a CIG, CGS, or CIGS light absorber layer with a single sputtering process by using a single target of each of CIS (CuInSe2) and CGS (CuGaSe2), to thereby enable to manufacture thin-films of various characteristics according to a control of a composition ratio of In and Ga as well as simplification of the process, and to thus provide a very favorable effect on the economics and efficiency.

    Abstract translation: 提供了CIS / CGS / CIGS薄膜制造方法和使用该方法制造的太阳能电池。 CIS / CGS / CIGS薄膜制造方法通过在基板上沉积电极层并且通过溅射CIS中的每一个的单个靶沉积光吸收层来实现CIS,CGS和CIGS薄膜,包括铜(Cu), 铟(In)和硒(Se)和CGS铜(Cu),镓(Ga)和硒(Se)。 此外,通过使用具有优异的结构,光学和电学性能的太阳能电池。 因此,可以通过使用CIS(CuInSe 2)和CGS(CuGaSe 2)中的每一个的单个靶沉积具有单次溅射工艺的CIG,CGS或CIGS光吸收层来制备薄膜,从而能够制造薄 - 根据In和Ga的组成比的控制以及工艺的简化,具有各种特性的膜,从而对经济性和效率提供非常有利的影响。

    Method for manufacturing solar cells having nano-micro composite structure on silicon substrate and solar cells manufactured thereby

    公开(公告)号:US09972732B2

    公开(公告)日:2018-05-15

    申请号:US15368024

    申请日:2016-12-02

    Abstract: One embodiment of the present invention relates to a method for manufacturing solar cells having a nano-micro composite structure on a silicon substrate and solar cells manufactured thereby. The technical problem to be solved is to provide a method for manufacturing solar cells and solar cells manufactured thereby, the method being capable of forming micro wires in various sizes according to the lithographic design of a photoresist and forming nano wires, which have various sizes and aspect ratios, by adjusting the concentration of a wet etching solution and immersion time. To this end, the present invention provides a method for manufacturing solar cells and solar cells manufactured thereby, the method comprising the steps of: preparing a first conductive semiconductor substrate having a first surface and a second surface; patterning a photoresist on the second surface of the first conductive semiconductor substrate such that the plane form of the photoresist becomes a form in which multiple horizontal lines and multiple vertical lines intersect each other; electrolessly etching the semiconductor substrate so as to form a micro wire having a width of 1-3 μm and a height of 3-5 μm in a region corresponding to the photoresist and to form multiple nano wires having a width of 1-100 nm and a height of 1-3 μm in a region not corresponding to the photoresist; doping the micro wire and nano wires with a second conductive impurity by using POCl3; forming a first electrode on the first surface of the semiconductor substrate; and forming a second electrode on the micro wire, wherein the efficiency of the solar cells is 10-13%, the efficiency being the ratio of output to incident light energy per unit area.

    METHOD FOR MANUFACTURING SOLAR CELLS HAVING NANO-MICRO COMPOSITE STRUCTURE ON SILICON SUBSTRATE AND SOLAR CELLS MANUFACTURED THEREBY

    公开(公告)号:US20170084765A1

    公开(公告)日:2017-03-23

    申请号:US15368024

    申请日:2016-12-02

    Abstract: One embodiment of the present invention relates to a method for manufacturing solar cells having a nano-micro composite structure on a silicon substrate and solar cells manufactured thereby. The technical problem to be solved is to provide a method for manufacturing solar cells and solar cells manufactured thereby, the method being capable of forming micro wires in various sizes according to the lithographic design of a photoresist and forming nano wires, which have various sizes and aspect ratios, by adjusting the concentration of a wet etching solution and immersion time. To this end, the present invention provides a method for manufacturing solar cells and solar cells manufactured thereby, the method comprising the steps of: preparing a first conductive semiconductor substrate having a first surface and a second surface; patterning a photoresist on the second surface of the first conductive semiconductor substrate such that the plane form of the photoresist becomes a form in which multiple horizontal lines and multiple vertical lines intersect each other; electrolessly etching the semiconductor substrate so as to form a micro wire having a width of 1-3 μm and a height of 3-5 μm in a region corresponding to the photoresist and to form multiple nano wires having a width of 1-100 nm and a height of 1-3 μm in a region not corresponding to the photoresist; doping the micro wire and nano wires with a second conductive impurity by using POCl3; forming a first electrode on the first surface of the semiconductor substrate; and forming a second electrode on the micro wire, wherein the efficiency of the solar cells is 10-13%, the efficiency being the ratio of output to incident light energy per unit area.

    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM
    8.
    发明申请
    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM 有权
    使用线性电子束结晶大面积无定形硅薄膜的方法制造多晶硅薄膜太阳能电池的方法

    公开(公告)号:US20150280048A1

    公开(公告)日:2015-10-01

    申请号:US14437087

    申请日:2012-12-18

    Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

    Abstract translation: 本发明的一个实施方案涉及通过使用线性电子束使大面积非晶硅薄膜结晶的方法制造多晶硅薄膜太阳能电池的方法,并且要解决的技术问题是使无定形 硅薄膜,其通过电子束形成在低价基板上,以便通过具有高结晶产率容易地获得高质量并在低温下进行处理。 为此,本发明的一个实施例提供一种利用线性电子束使大面积非晶硅薄膜结晶的方法制造多晶硅薄膜太阳能电池的方法,该方法包括: 制备底物的步骤; 1类非晶硅层沉积步骤,用于在衬底上形成1型非晶硅层; 1型非晶硅层沉积步骤,用于在1 +非晶硅层上形成1型非晶硅层; 吸收层形成步骤,用于通过将线性电子束照射到1型非晶硅层并因此使1型非晶层和1型非晶硅层结晶而形成吸收层; 用于在吸收层上形成2型非晶硅层的2型非晶硅层沉积步骤; 以及发射极层形成步骤,用于通过将线性电子束照射到2型非晶硅层并因此使2型非晶硅层结晶而形成发射极层,其中线性电子束从上述类型1和2型非晶硅 层,其以预定区域往复运动的线性扫描方式。

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