Invention Grant
- Patent Title: Capacitor cell and structure thereof
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Application No.: US15495106Application Date: 2017-04-24
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Publication No.: US10475793B2Publication Date: 2019-11-12
- Inventor: Chien-Yao Huang , Wun-Jie Lin , Chia-Wei Hsu , Yu-Ti Su
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/94 ; H01L27/02 ; H01L27/08 ; H01L29/861

Abstract:
A capacitor cell is provided. A first PMOS transistor is coupled between a power supply and a first node, having a gate coupled to a second node. A first NMOS transistor coupled between a ground and the second node, having a gate coupled to the first node. A second PMOS transistor, having a drain coupled to the second node, a gate coupled to the second node, and a source coupled to the power supply or the first node. A second NMOS transistor, having a drain coupled to the first node, a gate coupled to the first node, and a source coupled to the ground or the second node.
Public/Granted literature
- US20180308846A1 CAPACITOR CELL AND STRUCTURE THEREOF Public/Granted day:2018-10-25
Information query
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