Invention Grant
- Patent Title: Semiconductor device including a gate electrode and a conductive structure
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Application No.: US15355159Application Date: 2016-11-18
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Publication No.: US10541243B2Publication Date: 2020-01-21
- Inventor: Jung-Ho Do , Seungyoung Lee , Jonghoon Jung , Jinyoung Lim , Giyoung Yang , Sanghoon Baek , Taejoong Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2015-0162668 20151119; KR10-2015-0162675 20151119; KR10-2016-0048379 20160420; KR10-2016-0086996 20160708
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L23/522 ; H01L23/485
Abstract:
A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.
Public/Granted literature
- US20170148727A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2017-05-25
Information query
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