A field effect transistor including a dielectric layer on a substrate, a nano-structure material (NSM) layer on the dielectric layer, a source electrode and a drain electrode formed on the NSM layer, a gate dielectric formed on at least a portion of the NSM layer between the source electrode and the drain electrode, a T-shaped gate electrode formed between the source electrode and the drain electrode, where the NSM layer forms a channel of the FET, and a doping layer on the NSM layer extending at least from the sidewall of the source electrode to a first sidewall of the gate dielectric, and from a sidewall of the drain electrode to a second sidewall of the gate dielectric.