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    Placement of carbon nanotube guided by DSA patterning
    1.
    发明授权
    Placement of carbon nanotube guided by DSA patterning 有权

    公开(公告)号：US10374179B2

    公开(公告)日：2019-08-06

    申请号：US16247326

    申请日：2019-01-14

    Applicant: International Business Machines Corporation

    Inventor： Ali Afzali-Ardakani ,  Sarunya Bangsaruntip ,  Shu-Jen Han ,  HsinYu Tsai

    IPC: H01L29/06 ,  H01L51/05 ,  H01L51/00

    Abstract: In one aspect, a method for placing carbon nanotubes on a dielectric includes: using DSA of a block copolymer to create a pattern in the placement guide layer on the dielectric which includes multiple trenches in the placement guide layer, wherein there is a first charge on sidewall and top surfaces of the trenches and a second charge on bottom surfaces of the trenches, and wherein the first charge is different from the second charge; and depositing a carbon nanotube solution onto the dielectric, wherein self-assembly of the deposited carbon nanotubes within the trenches occurs based on i) attractive forces between the first charge on the surfaces of the carbon nanotubes and the second charge on the bottom surfaces of the trenches and ii) repulsive forces between the first charge on the surfaces of the carbon nanotubes and the first charge on sidewall and top surfaces of the trenches.

    Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitch
    3.
    发明授权
    Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitch 失效
    用于以积极的间距产生均匀的非平面半导体器件的两步氢退火工艺

    公开(公告)号：US08586454B2

    公开(公告)日：2013-11-19

    申请号：US13759648

    申请日：2013-02-05

    Applicant: International Business Machines Corporation

    Inventor： Jeffrey W. Sleight ,  Sarunya Bangsaruntip

    IPC: H01L21/321 ,  H01L21/324

    CPC classification number: H01L21/02104 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/3247 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

    Abstract: A two-step hydrogen anneal process has been developed for use in fabricating semiconductor nanowires for use in non-planar semiconductor devices. In the first part of the two-step hydrogen anneal process, which occurs prior to suspending a semiconductor nanowire, the initial roughness of at least the sidewalls of the semiconductor nanowire is reduced, while having at least the bottommost surface of the nanowire pinned to an uppermost surface of a substrate. After performing the first hydrogen anneal, the semiconductor nanowire is suspended and then a second hydrogen anneal is performed which further reduces the roughness of all exposed surfaces of the semiconductor nanowire and reshapes the semiconductor nanowire. By breaking the anneal into two steps, smaller semiconductor nanowires at a tight pitch survive the process and yield.

    Abstract translation: 已经开发了用于制造用于非平面半导体器件的半导体纳米线的两步氢退火工艺。 在悬浮半导体纳米线之前发生的两步氢退火工艺的第一部分中，至少半导体纳米线的侧壁的初始粗糙度减小，同时至少将纳米线的最底表面固定到 基板的最上表面。 在执行第一氢退火之后，将半导体纳米线悬浮，然后执行第二氢退火，这进一步降低了半导体纳米线的所有暴露表面的粗糙度并重新形成了半导体纳米线。 通过将退火分解为两个步骤，较窄的半导体纳米线在工艺和产量方面存在。

    Superconductor devices having buried quasiparticle traps
    4.
    发明授权
    Superconductor devices having buried quasiparticle traps 有权

    公开(公告)号：US11515461B2

    公开(公告)日：2022-11-29

    申请号：US16728504

    申请日：2019-12-27

    Applicant: International Business Machines Corporation

    Inventor： Baleegh Abdo ,  Sarunya Bangsaruntip

    IPC: H01L39/24 ,  G06N10/00

    Abstract: Techniques for trapping quasiparticles in superconductor devices are provided. A superconductor device can comprise a substrate layer. The superconductor device can further comprise a first superconductor layer composed of a first superconductor material, on a first surface of a substrate layer. The superconductor device can further comprise a trapping material buried in the first superconductor layer, wherein the trapping material is formulated to trap quasiparticles.

    Placement of Carbon Nanotube Guided by DSA Patterning
    10.
    发明申请
    Placement of Carbon Nanotube Guided by DSA Patterning 审中-公开

    公开(公告)号：US20190165289A1

    公开(公告)日：2019-05-30

    申请号：US16247326

    申请日：2019-01-14

    Applicant: International Business Machines Corporation

    Inventor： Ali Afzali-Ardakani ,  Sarunya Bangsaruntip ,  Shu-Jen Han ,  HsinYu Tsai

    IPC: H01L51/05 ,  H01L51/00

    CPC classification number: H01L51/0558 ,  H01L51/0003 ,  H01L51/0012 ,  H01L51/0049 ,  H01L51/0093 ,  H01L51/0545 ,  H01L2251/303

    Abstract: In one aspect, a method for placing carbon nanotubes on a dielectric includes: using DSA of a block copolymer to create a pattern in the placement guide layer on the dielectric which includes multiple trenches in the placement guide layer, wherein there is a first charge on sidewall and top surfaces of the trenches and a second charge on bottom surfaces of the trenches, and wherein the first charge is different from the second charge; and depositing a carbon nanotube solution onto the dielectric, wherein self-assembly of the deposited carbon nanotubes within the trenches occurs based on i) attractive forces between the first charge on the surfaces of the carbon nanotubes and the second charge on the bottom surfaces of the trenches and ii) repulsive forces between the first charge on the surfaces of the carbon nanotubes and the first charge on sidewall and top surfaces of the trenches.

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